參數(shù)資料
型號: IRF646
廠商: HARRIS SEMICONDUCTOR
元件分類: JFETs
英文描述: 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET
中文描述: 14 A, 275 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 5/7頁
文件大?。?/td> 60K
代理商: IRF646
4-218
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE FORWARD VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
1.25
1.05
0.95
0.85
0.75
-60
-40
-20
0
20
40
60
T
J
, JUNCTION TEMPERATURE (
o
C)
N
B
100 120 140 160
1.15
80
I
D
= 250
μ
A
3000
600
0
0
10
100
C
1800
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2400
1200
C
ISS
C
OSS
C
RSS
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
25
o
C
I
D
, DRAIN CURRENT (A)
g
f
,
0
0
5
10
15
20
3
6
9
12
15
25
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DS
50V
0
0.8
1.2
1.6
2.0
0.4
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
0.1
1
10
I
S
,
100
25
o
C
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
Q
g
, GATE CHARGE (nC)
V
G
,
0
0
12
24
36
48
4
8
12
16
20
60
V
DS
= 200V
V
DS
= 50V
V
DS
= 125V
I
D
= 14A
IRF646
相關(guān)PDF資料
PDF描述
IRF6604 Power MOSFET
IRF6607 Power MOSFET
IRF6607TR1 Power MOSFET
IRF6608 lHEXFET Power MOSFET
IRF6611 DirectFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF646_R4943 功能描述:MOSFET TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF647 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRF650 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET
IRF650A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 28A I(D) | TO-220AB
IRF650B 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: