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參數(shù)資料
| 型號： | IRF646 |
| 廠商： | HARRIS SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET |
| 中文描述： | 14 A, 275 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 60K |
| 代理商： | IRF646 |
4-215
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF646
275
275
14
8.8
56
±
20
125
1.0
550
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V (Figure 7)
V
GS
=
±
20V
I
D
= 8A, V
GS
= 10V (Figures 8, 9)
V
DS
≥
50V, I
D
= 8A (Figure 12)
V
DD
= 125V, I
D
≈
14A, R
GS
= 9.1
, R
L
= 8.6
,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
275
-
-
V
Gate Threshold Voltage
2
-
4
V
Zero Gate Voltage Drain Current
-
-
25
μ
A
μ
A
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
14
-
-
A
Gate to Source Leakage Current
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
0.200
0.280
Forward Transconductance (Note 2)
6.7
10
-
S
Turn-On Delay Time
-
16
24
ns
Rise Time
-
67
100
ns
Turn-Off Delay Time
-
53
80
ns
Fall Time
-
49
74
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= 10V, I
D
= 14A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= 1.5mA, (Figure 14) Gate Charge is
Essentially Independent of Operating Temperature
-
39
59
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
6.6
-
nC
Gate to Drain “Miller” Charge
-
20
-
nC
Input Capacitance
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
-
1300
-
pF
Output Capacitance
-
320
-
pF
Reverse Transfer Capacitance
-
69
-
pF
Internal Drain Inductance
MeasuredfromtheContact
Screw on Tab to Center of
Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
-
7.5
-
nH
Internal Source Inductance
L
S
Measured from the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
1
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
Free Air Operation
-
-
80
L
S
L
D
G
D
S
IRF646
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