參數(shù)資料
型號(hào)： IRF640
廠商： INTERSIL CORP
元件分類： 功率晶體管
英文描述： 18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述： 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/7頁(yè)
文件大小： 61K
代理商： IRF640
4-209
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF640, RF1S640SM
200
200
18
11
72
±
20
125
1.0
580
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
MIN
200
2
-
-
18
-
-
6.7
-
-
-
-
-
TYP
-
-
-
-
-
-
0.14
10
13
50
46
35
43
MAX
-
4
25
250
-
±
100
0.18
-
21
77
68
54
64
UNITS
V
V
μ
A
μ
A
A
nA
S
ns
ns
ns
ns
nC
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
D
= 250
μ
A, V
GS
= 0V, (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V (Figure 7)
V
GS
=
±
20V
I
D
= 10A, V
GS
= 10V (Figures 8, 9)
V
DS
≥
10V, I
D
= 11A (Figure 12)
V
DD
= 100V, I
D
≈
18A, R
GS
= 9.1
, R
L
= 5.4
,
MOSFET Switching Times are Essentially
Independent of Operating Temperature
On-State Drain Current (Note 1)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 1)
Forward Transconductance (Note 1)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
V
GS
= 10V, I
D
≈
18A, V
DS
= 0.8 x Rated BV
DSS
(Figure 14) Gate Charge is Essentially Independent
of Operating Temperature
I
G(REF)
= 1.5mA
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
-
-
-
-
-
8
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
22
1275
400
100
3.5
V
DS
= 25V, V
GS
= 0V, f = 1MHz (Figure 11)
Measured From the
Contact Screw on Tab to
Center of Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Measured From the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
-
7.5
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to
Ambient
R
θ
JC
R
θ
JA
R
θ
JA
-
-
-
-
-
-
1
62
62
o
C/W
o
C/W
o
C/W
Free Air Operation, IRF640
RF1S640SM Mounted on FR-4 Board with
Minimum Mounting Pad
L
S
L
D
G
D
S
IRF640, RF1S640SM
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