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參數(shù)資料
| 型號： | IRF630PBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET ( VDSS = 200V , RDS(on) = 0.40ヘ , ID = 9.0A ) |
| 中文描述： | HEXFET功率MOSFET（減振鋼板基本\u003d 200V的電壓，的RDS（on）\u003d 0.40ヘ，身份證\u003d 9.0,9.0） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 2112K |
| 代理商： | IRF630PBF |
8
www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
09/04
3- SOURCE
- B -
1.32 (.052)
1.22 (.048)
3X0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
3X
0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
HEXFET
1- GATE
LEAD ASSIGNMENTS
IGBTs, CoPACK
1- GATE
3- EMITTER
Dimensions are shown in millimeters (inches)
EXAMPLE:
IN THE ASSEMBLY LINE "C"
THIS IS AN IRF1010
LOT C ODE 1789
ASSEMBLED ON WW 19, 1997
PART NUMBER
ASSEMBLY
LOT CODE
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
LOGO
RECTIFIER
INTERNATIONAL
Note:
"P" in assembly line
position indicates "Lead-Free"
相關PDF資料 |
PDF描述 |
|---|---|
| IRF630SPBF | HEXFET POWER MOSFET ( VDSS = 200V , RDS(on) = 0.40ヘ , ID = 9.0A ) |
| IRF646 | 14A, 275V, 0.280 Ohm, N-Channel Power MOSFET |
| IRF6604 | Power MOSFET |
| IRF6607 | Power MOSFET |
| IRF6607TR1 | Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF630R | 制造商:All American Misc. 功能描述: |
| IRF630S | 功能描述:MOSFET N-Chan 200V 9.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF630SPBF | 功能描述:MOSFET N-Chan 200V 9.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF630ST4 | 功能描述:MOSFET N-Ch 200 Volt 9 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF630STRL | 功能描述:MOSFET N-Chan 200V 9.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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