參數(shù)資料
型號(hào): IRF6218L
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 6/9頁
文件大小: 234K
代理商: IRF6218L
IRF6218S/L
6
www.irf.com
Fig 13.
On-Resistance vs. Gate Voltage
Fig 12.
On-Resistance vs. Drain Current
Fig 14a&b.
Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b.
Unclamped Inductive Test circuit
and Waveforms
Fig 15c.
Maximum Avalanche Energy
vs. Drain Current
D.U.T.
V
DS
+
I
D
I
G
-3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
-
Q
G
Q
GS
Q
GD
V
G
Charge
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
V
DD
DRIVER
A
15V
-20V
tp
V
(BR)DSS
I
AS
0
20
40
60
80
-ID , Drain Current (A)
100
150
200
250
300
350
400
RD
)
VGS = -10V
4
5
6
7
8
9
10
11
12
-VGS, Gate -to -Source Voltage (V)
0
100
200
300
400
500
600
700
800
900
1000
RD
)
ID = -27A
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
500
600
700
800
900
EA
ID
TOP -4.6A
-6.3A
BOTTOM-16A
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