參數(shù)資料
型號(hào): IRF6218L
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 234K
代理商: IRF6218L
IRF6218S/L
www.irf.com
3
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
2
4
6
8
10
12
-VGS, Gate-to-Source Voltage (V)
1.0
10
100
-D
(
)
TJ = 25°C
TJ = 175°C
VDS = 50V
60μs PULSE WIDTH
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
0.5
1.0
1.5
2.0
2.5
RD
ID = -27A
VGS = -10V
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
-D
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
TOP
BOTTOM
60μs PULSE WIDTH
Tj = 25°C
-4.5V
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
-D
-4.5V
60μs PULSE WIDTH
Tj = 175°C
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
TOP
BOTTOM
相關(guān)PDF資料
PDF描述
IRF6218S HEXFET Power MOSFET
IRF624PBF HEXFET Power MOSFET
IRF624SPBF Replacement for Texas Instruments part number SN74LS11N. Buy from authorized manufacturer Rochester Electronics.
IRF630NLPBF HEXFET Power MOSFET
IRF630NPBF HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF6218PBF 功能描述:MOSFET 1 P-CH -150V HEXFET 150mOhms 21nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6218PBF 制造商:International Rectifier 功能描述:MOSFET
IRF6218S 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET
IRF6218SHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 150V 27A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 150V 27A 3PIN D2PAK - Rail/Tube
IRF6218SPBF 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube