參數(shù)資料
型號(hào)： IRF620
廠商： HARRIS SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： 5.0A, 200V, 0.800 Ohm, N-Channel PowerMOSFET(5.0A, 200V, 0.800 Ohm,,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
中文描述： 5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 54K
代理商： IRF620
4-197
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRF620
200
200
5.0
3.0
20
±
20
40
0.32
85
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 125
o
C
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
V
GS
= 0V, I
D
= 250
μ
A, (Figure 10)
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V
V
GS
=
±
20V
V
GS
= 10V, I
D
= 2.5A, (Figures 8, 9)
V
DS
> I
D(ON)
x r
DS(ON)MAX
, I
D
= 2.5A (Figure 12)
V
DD
= 100V, I
D
≈
5.0A, R
G
= 9.1
, R
L
= 20
,
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
200
-
-
V
Gate Threshold Voltage
2.0
-
4.0
V
Zero Gate Voltage Drain Current
-
-
25
μ
A
μ
A
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
5.0
-
-
A
Gate to Source Leakage Current
-
-
±
100
nA
Drain to Source On Resistance (Note 2)
-
0.8
1.2
Forward Transconductance (Note 2)
1.3
2.5
-
S
Turn-On Delay Time
-
20
40
ns
Rise Time
-
30
60
ns
Turn-Off Delay Time
-
50
100
ns
Fall Time
-
30
60
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= 10V, I
D
= 5.0A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= 1.5mA, (Figure 14)
Gate Charge is Essentially Independent of
Operating Temperature
-
11
15
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
5.0
-
nC
Gate to Drain “Miller” Charge
-
6.0
-
nC
Input Capacitance
V
DS
= 25V, V
GS
= 0V, f = 1MHz, (Figure 11)
-
450
-
pF
Output Capacitance
-
150
-
pF
Reverse Transfer Capacitance
-
40
-
pF
Internal Drain Inductance
Measured from the Contact
Screw on Tab to Center of
Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
-
3.5
-
nH
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
-
4.5
-
nH
Internal Source Inductance
L
S
Measured from the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
-
7.5
-
nH
Thermal Resistance Junction to Case
R
θ
JC
R
θ
JA
-
-
3.12
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
Free Air Operation
-
-
62.5
L
S
L
D
G
D
S
IRF620
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF620 制造商:STMicroelectronics 功能描述:MOSFET N TO-220
IRF620_R4941 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6201PBF 功能描述:MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF6201TRPBF 功能描述:MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF620A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | TO-220AB
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