參數(shù)資料
型號(hào)： IRF5210LPBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/10頁
文件大小： 707K
代理商： IRF5210LPBF
2
www.irf.com
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Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min.
-100
–––
–––
-2.0
9.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
-0.11
–––
–––
60
–––
-4.0
–––
–––
–––
-50
–––
-250
–––
100
–––
-100
150
230
22
33
81
120
14
–––
63
–––
72
–––
55
–––
4.5
–––
V
V/°C
m
V
S
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
nH
Between lead,
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
C
iss
C
oss
C
rss
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2780
800
430
–––
–––
–––
pF
Min.
–––
Typ. Max. Units
–––
-38
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
-140
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
170
1180
-1.6
260
1770
V
ns
nC
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -50V, I
D
= -23A
V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= -38A
T
J
= 25°C, I
F
= -23A, V
DD
= -25V
di/dt = -100A/μs
T
J
= 25°C, I
S
= -23A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= -10V
MOSFET symbol
Conditions
R
G
= 2.4
I
D
= -23A
V
DS
= -80V
V
GS
= -10V
V
DD
= -50V
I
D
= -23A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF5210PBF 功能描述:MOSFET MOSFT PCh -100V -40A 60mOhm 120nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF5210PBF 制造商:International Rectifier 功能描述:MOSFET P -100V -40A TO-220 制造商:International Rectifier 功能描述:MOSFET P TO-220 TUBE 50 制造商:International Rectifier 功能描述:MOSFET, P, -100V, -40A, TO-220 制造商:International Rectifier 功能描述:MOSFET, P, -100V, -40A, TO-220; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power ;RoHS Compliant: Yes
IRF5210PBF 制造商:International Rectifier 功能描述:MOSFET
IRF5210S 制造商:International Rectifier 功能描述:MOSFET P D2-PAK
IRF5210SHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 40A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 40A 3PIN D2PAK - Rail/Tube
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