- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384490 > IRF520 (INTERSIL CORP) 9.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號(hào)： | IRF520 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 9.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 69K |
| 代理商： | IRF520 |
4-175
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
100
10
1
1000
1
10
100
0.1
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
C
= 25
o
C
T
J
= MAX RATED
SINGLE PULSE
10
μ
s
100
μ
s
1ms
10ms
OPERATION IN THIS
AREA IS LIMITED
BY r
DS(ON)
10V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
20
0
50
15
12
9
0
6
I
D
,
V
GS
= 7V
3
30
V
GS
= 6V
V
GS
= 8V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
10
40
V
GS
= 5V
V
GS
= 4V
15
12
9
0
6
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
2
3
4
0
5
I
D
,
3
V
GS
= 6V
V
GS
= 5V
V
GS
= 4V
V
GS
= 7V
V
GS
= 8V
V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
10
2
0.1
2
V
GS
, GATE TO SOURCE VOLTAGE (V)
4
6
8
0
I
D
,
1
10
10
175
o
C
25
o
C
V
DS
≥
50V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
16
32
0
40
2.5
2.0
1.5
0
1.0
r
D
,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
8
24
0.5
V
GS
= 10V
V
GS
= 20V
3.0
1.8
0.6
0
60
-60
T
J
, JUNCTION TEMPERATURE (
o
C)
N
2.4
1.2
0
-40
-20
20
40
80
100
140
120
160 180
I
D
= 9.2A, V
GS
= 10V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
IRF520
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF530 | 14A, 100V, 0.160 Ohm, N-Channel Power MOSFET(14A, 100V, 0.160 Ohm,N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管) |
| IRF540N | 30V N-Channel PowerTrench MOSFET |
| IRF540N | Power MOSFET(Vdss=100V, Rds(on)=44mohm, Id=33A) |
| IRF540ZLPBF | AUTOMOTIVE MOSFET |
| IRF540ZPBF | AUTOMOTIVE MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF520_R4941 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF520A | 功能描述:MOSFET 9.2A 100V .4 OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF520CHIP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | CHIP |
| IRF520FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| IRF520L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。