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參數(shù)資料
| 型號： | IRF520 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 9.2A, 100V, 0.270 Ohm,, N-Channel Power MOSFET(9.2A, 100V, 0.270 Ω,N溝道增強(qiáng)型功率MOS場效應(yīng)管) |
| 中文描述： | 9.2 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 69K |
| 代理商： | IRF520 |
4-174
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction Diode
-
-
9.2
A
Pulse Source to Drain Current (Note 3)
I
SDM
-
-
37
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= 9.2A, V
GS
= 0V (Figure 13)
T
J
= 25
o
C, I
SD
= 9.2A, dI
SD
/dt = 100A/
μ
s
T
J
= 25
o
C, I
SD
= 9.2A, dI
SD
/dt = 100A/
μ
s
-
-
2.5
V
Reverse Recovery Time
t
rr
5.5
100
240
ns
Reverse Recovered Charge
Q
RR
0.17
0.5
1.1
μ
C
NOTES:
2. Pulse test: pulse width
≤
300
μ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. V
DD
= 25V, starting T
J
= 25
o
C, L = 640mH, R
G
= 25
,
peak I
AS
= 9.2A.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
G
D
S
T
C
, CASE TEMPERATURE (
o
C)
25
50
75
100
125
150
175
0
P
0
0.2
0.4
0.6
0.8
1.0
1.2
T
C
, CASE TEMPERATURE (
o
C)
50
75
100
175
25
10
8
6
0
4
I
D
,
2
125
150
Z
θ
J
,
1
0.1
0.01
10
-2
10
-5
10
-4
10
-3
0.1
1
10
t
1
, RECTANGULAR PULSE DURATION (s)
P
DM
t
1
t
2
10
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
SINGLE PULSE
0.5
0.02
0.01
0.05
0.2
0.1
T
o
C
IRF520
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF520_R4941 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF520A | 功能描述:MOSFET 9.2A 100V .4 OHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF520CHIP | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 9.2A I(D) | CHIP |
| IRF520FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| IRF520L | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A) |
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