參數(shù)資料
型號: IRF1405LPBF
廠商: International Rectifier
英文描述: AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3mヘ , ID = 131A )
中文描述: 汽車MOSFET的(減振鋼板基本\u003d 55V的,的RDS(on)\u003d 5.3米ヘ,身份證\u003d 131A章)
文件頁數(shù): 2/12頁
文件大小: 244K
代理商: IRF1405LPBF
2
www.irf.com
Parameter
Min. Typ. Max. Units
55
–––
–––
0.057 –––
–––
4.6
2.0
–––
69
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
–––
44
–––
62
–––
13
–––
190
–––
130
–––
110
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 101A
V
DS
= 10V, I
D
= 250μA
V
DS
= 25V, I
D
= 110A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= 101A
V
DS
= 44V
V
GS
= 10V
V
DD
= 38V
I
D
= 110A
R
G
= 1.1
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
m
V
S
5.3
4.0
–––
20
250
200
-200
260
66
93
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
5480
1210
280
5210
900
1500
–––
–––
–––
–––
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
S
D
G
I
GSS
ns
4.5
7.5
I
DSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 101A, V
GS
= 0V
T
J
= 25°C, I
F
= 101A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
88
250
1.3
130
380
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
131
680
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