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參數(shù)資料
| 型號(hào)： | IRF1405LPBF |
| 廠商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3mヘ , ID = 131A ) |
| 中文描述： | 汽車MOSFET的（減振鋼板基本\u003d 55V的，的RDS（on）\u003d 5.3米ヘ，身份證\u003d 131A章） |
| 文件頁數(shù)： | 11/12頁 |
| 文件大?。?/td> | 244K |
| 代理商： | IRF1405LPBF |
www.irf.com
11
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.11mH
R
G
= 25
, I
AS
= 101A. (See Figure 12).
I
SD
≤
101A, di/dt
≤
210A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400μs; duty cycle
≤
2%.
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
05/04
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.60 (.063)
1.50 (.059)
4.10 (.161)
TRL
FEED DIRECTION
10.90 (.429)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF1405SPBF | AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 5.3mヘ , ID = 131A ) |
| IRF1405ZLPBF | AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 75A ) |
| IRF1405ZPBF | AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 75A ) |
| IRF1405ZSPBF | AUTOMOTIVE MOSFET ( VDSS = 55V , RDS(on) = 4.9mヘ , ID = 75A ) |
| IRF1407LPBF | HEXFET㈢ Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078ヘ , ID = 100A ) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF1405PBF | 功能描述:MOSFET MOSFT 55V 133A 5.3mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1405S | 功能描述:MOSFET N-CH 55V 131A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRF1405SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 55V 131A 3-Pin(2+Tab) D2PAK |
| IRF1405SPBF | 功能描述:MOSFET 55V 1 N-CH HEXFET 5.3mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF1405STRL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 131A I(D) | TO-263AB |
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