參數(shù)資料
型號: IR230SG12HCB
廠商: VISHAY SEMICONDUCTORS
元件分類: 晶閘管
英文描述: SCR
封裝: 4 INCH, WAFER
文件頁數(shù): 1/3頁
文件大小: 108K
代理商: IR230SG12HCB
1
www.irf.com
Junction Size:
Square 230 mils
Wafer Size:
4"
V
RRM
Class:
600 and 1200 V
Passivation Process:
Glassivated MESA
Reference IR Packaged Part:
n. a.
PHASE CONTROL THYRISTORS
IR230SG..HCB SERIES
Major Ratings and Characteristics
Parameters
Units
Test Conditions
V
TM
Maximum On-state Voltage
1.3 V
T
J
= 25°C, I
T
= 25 A
V
RRM
ReverseBreakdownVoltage
600 and 1200V
T
J
= 25°C, I
RRM
= 100 A
(1)
I
GT
Max. Required DC Gate Current to Trigger
60 mA
T
J
= 25° C, anode supply = 6 V, resistive load
V
GT
Max. Required DC Gate Voltage to Trigger
1.9 V
T
J
= 25° C, anode supply = 6 V, resistive load
I
H
HoldingCurrentRange
5 to 150 mA
Anode supply = 6 V, resistive load
I
L
Maximum Latching Current
400mA
Anode supply = 6 V, resistive load
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Chip Dimensions
230 x 230 mils (see drawing)
Wafer Diameter
100 mm, with std. < 100 > flat
Wafer Thickness
370 m ± 10 m
Maximum Width of Sawing Line
130 m
Reject Ink Dot Size
0.25 mm diameter minimum
Ink Dot Location
See drawing
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen, with no contamination
Bulletin I0205J 07/98
(1) Nitrogen flow on die edge.
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