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參數(shù)資料
| 型號： | IR250SG12H |
| 廠商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類： | 晶閘管 |
| 英文描述： | SCR |
| 封裝： | 4 INCH WAFER |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | IR250SG12H |
Junction Size:
Square 250 mils
Wafer Size:
4"
V
RRM
Class:
1200 V
Passivation Process:
Glassivated MESA
Reference IR Packaged Part:
n. a.
PHASE CONTROL THYRISTORS
IR250SG12HCB
Major Ratings and Characteristics
Parameters
Units
Test Conditions
V
TM
Maximum On-state Voltage
1.3 V
T
J
= 25°C, I
T
= 25 A
V
RRM
Reverse Breakdown Voltage
1200 V
T
J
= 25°C, I
RRM
= 100 A
(1)
I
GT
Max. Required DC Gate Current to Trigger
100mA
T
J
= 25° C, anode supply = 6 V, resistive load
V
GT
Max. Required DC Gate Voltage to Trigger
2 V
T
J
= 25° C, anode supply = 6 V, resistive load
I
H
Holding Current Range
5 to 200 mA
Anode supply = 6 V, resistive load
I
L
Maximum Latching Current
400 mA
Anode supply = 6 V, resistive load
Mechanical Characteristics
Nominal Back Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
Nominal Front Metal Composition, Thickness
Cr - Ni - Ag (1 KA - 4 KA - 6 KA)
ChipDimensions
250 x 250 mils (see drawing)
Wafer Diameter
100 mm, with std. <110> flat
Wafer Thickness
370 m ± 10 m
Maximum Width of Sawing Line
130 m
Reject Ink Dot Size
0.25 mm diameter minimum
Ink Dot Location
See drawing
Recommended Storage Environment
Storage in original container, in dessicated
nitrogen, with no contamination
Bulletin I0210J 12/98
(1) Nitrogen flow on die edge.
Document Number: 93896
www.vishay.com
1
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