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參數(shù)資料
| 型號(hào)： | INA-32063 |
| 英文描述： | 3.0 GHz Wideband Silicon RFIC Amplifier(3.0 GHz 寬頻帶硅射頻集成電路放大器) |
| 中文描述： | 3.0千兆赫寬帶硅射頻放大器（3.0千兆赫寬頻帶硅射頻集成電路放大器） |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大小： | 87K |
| 代理商： | INA-32063 |
3
INA-32063 Typical Performance,
T
C
= 25
°
C, Z
O
= 50
, V
d
= 3 V
5
25
15
20
10
0
1.0
0.5
1.5
2.0
3.0
2.5
1.0
0.5
1.5
2.0
3.0
2.5
1.0
0.5
1.5
2.0
3.0
2.5
1.0
0.5
1.5
2.0
3.0
2.5
G
(
FREQUENCY (GHz)
Figure 1. Gain vs. Frequency and
Voltage.
N
(
FREQUENCY (GHz)
Figure 2. Noise Figure vs. Frequency
and Voltage.
P
1
(
FREQUENCY (GHz)
Figure 3. Output Power for 1 dB Gain
Compression vs. Frequency and
Voltage.
G
(
FREQUENCY (GHz)
Figure 4. Gain vs. Frequency and
Temperature.
N
(
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency
and Temperature.
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and
Temperature.
2.7 V
3.0 V
3.3 V
5
25
15
20
10
0
1.0
0.5
1.5
2.0
3.0
2.5
0
-40
°
C
+25
°
C
+85
°
C
1.0
0.5
1.5
2.0
2.5
3.5
6
0
2.7 V
3.0 V
3.3 V
-2
8
0
3.0
2.7 V
3.0 V
3.3 V
P
1
(
FREQUENCY (GHz)
-40
°
C
+25
°
C
+85
°
C
V
FREQUENCY (GHz)
Figure 7. Input and Output VSWR vs.
Frequency.
0
4
3
VSWR in
VSWR out
I
d
V
d
(V)
Figure 8. Supply Current vs. Voltage
and Temperature.
0
0
2
1
3
4
5
4.5
5
4
5.5
2
4
0
6
2
4
0
6
3
6.5
5
5.5
6
3.5
4
4.5
35
20
25
30
5
10
15
0
-40
°
C
+25
°
C
+85
°
C
-40
°
C
+25
°
C
+85
°
C
Figure 9. Third Order Intercept
Point, IP
3
vs. Frequency and
Temperature.
I
3
(
FREQUENCY (GHz)
6
18
10
14
8
0
16
12
1
2
0.5
2.5
1.5
-40
°
C
+25
°
C
+85
°
C
-2
8
0
1.0
0.5
1.5
2.0
3.0
2.5
1.0
0.5
1.5
2.0
3.0
2.5
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| INA-32063-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:3.0 GHz Wideband Silicon RFIC Amplifier |
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| INA-32063-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:3.0 GHz Wideband Silicon RFIC Amplifier |
| INA321 | 制造商:TI 制造商全稱:Texas Instruments 功能描述:microPower, Single-Supply, CMOS Instrumentation Amplifier |
| INA321E | 制造商:Texas Instruments 功能描述:AMP INSTRUMENTATION VSSOP8 321 |
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