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參數(shù)資料
| 型號： | INA-32063 |
| 英文描述： | 3.0 GHz Wideband Silicon RFIC Amplifier(3.0 GHz 寬頻帶硅射頻集成電路放大器) |
| 中文描述： | 3.0千兆赫寬帶硅射頻放大器（3.0千兆赫寬頻帶硅射頻集成電路放大器） |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 87K |
| 代理商： | INA-32063 |
2
Thermal Resistance
[2]
:
θ
jc
= 170
°
C/W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. T
= 25
°
C (T
is defined to be the
temperature at the package pins where
contact is made to the circuit board)
INA-32063 Electrical Specifications
, T
C
= 25
°
C, Z
O
= 50
,V
d
= 3 V
Symbol
Parameters and Test Conditions
Units
Min.
Typ. Max.
Std.
Dev.
[4]
|S
21
|
2
Gain in 50
system
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.9 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 0.1 – 2.4 GHz
f = 0.1 – 2.4 GHz
dB
16.8
17.8
18.2
4.4
3.6
4.8
4.0
15.3
14.4
11.5
1.1:1
1.6:1
20
15.5
[3]
0.39
NF
50
P
1dB
Noise Figure
Output Power at 1 dB Gain Compression
dB
dBm
0.21
IP
3
Output Third Order Intercept Point
dBm
VSWR
in
VSWR
out
Ι
d
Notes:
3. Guaranteed specifications are 100% tested in production.
4. Standard deviation number is based on measurement of a large number of parts from three non-consecutive wafer lots
during the initial characterization of this product, and is intended to be used as an estimate for distribution of the
typical specification.
Input VSWR
Output VSWR
Device Current
mA
25
[3]
1.1
Absolute Maximum Ratings
Absolute
Maximum
[1]
6.0
Symbol
V
d
Parameter
Units
V
Device Voltage,
RF output to ground
CW RF Input Power
Junction Temperature
Storage Temperature
P
in
T
j
T
STG
dBm
°
C
°
C
+7.0
150
-65 to 150
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| INA-32063-BLK | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:3.0 GHz Wideband Silicon RFIC Amplifier |
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| INA-32063-TR2 | 制造商:AGILENT 制造商全稱:AGILENT 功能描述:3.0 GHz Wideband Silicon RFIC Amplifier |
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| INA321E | 制造商:Texas Instruments 功能描述:AMP INSTRUMENTATION VSSOP8 321 |
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