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參數(shù)資料
| 型號： | IMXPWSWP_D |
| 英文描述： | i.MX Application Processor Creating Power with Stamina White Paper White Paper |
| 中文描述： | i.MX應(yīng)用處理器創(chuàng)建功耗耐力白皮書白皮書 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 217K |
| 代理商： | IMXPWSWP_D |
Creating Performance with Stamina for Wireless Communications White Paper, Rev. 2
Freescale Semiconductor
9
Conclusion
As Buyers of pocket-sized wireless devices, now and in the future, we expect a workable, real world
balance of performance and stamina. This is particularly applicable in the emerging 3G environment,
because we expect to use the more powerful and feature rich 3G products extensively. That’s the challenge.
Advanced services provide more value to us, but demand more from our batteries. We will not accept
frequent disconnection from the network because our batteries keep running low, nor will we forego new
services because we don’t have adequate performance.
As we have seen, battery technology is struggling to keep up with processing technology and system
requirements. It is our charge to close the gap from the top down, meaning getting more work for longer
periods of time from whatever the batteries have to offer. In this brief paper we have explored the
techniques we use to provide world-class handheld wireless communication solutions to our customers
and the reasons why we use these techniques. It goes without saying, however, that these may not be
adequate for what’s out there beyond 3G, and to reach our goals of performance with stamina in all our
future applications, we will be pushing ourselves without rest, and our performance and our stamina will
be constantly tested.
相關(guān)PDF資料 |
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| IMZ1 | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 100MA I(C) | SO |
| IMZ2 | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 100MA I(C) | SO |
| IMZ3A | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 100MA I(C) | SO |
| IMZ3 | TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 100MA I(C) | SO |
| IN4148-1 | LED Mount; Bulb Size:T-1; LED Color:Yellow; Luminous Intensity:20mcd; Viewing Angle:45 ; Forward Current:30mA; Forward Voltage:2.1V; Operating Temperature Range:-40 C to +85 C; Leaded Process Compatible:Yes RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IMZ1 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| IMZ1A | 制造商:ROHM 制造商全稱:Rohm 功能描述:General purpose transistor (dual transistors) |
| IMZ1AT108 | 功能描述:兩極晶體管 - BJT NPN/PNP 50V 150MA SOT-457 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| IMZ1T108 | 制造商:ROHM 功能描述:* |
| IMZ2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 40V V(BR)CEO | 100MA I(C) | SO |
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