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參數(shù)資料
| 型號： | IMD23 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（雙數(shù)字晶體管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 80K |
| 代理商： | IMD23 |
IMD23
Transistors
DT
r2
Limits
Unit
2/4
Parameter
Symbol
V
CC
50
V
10
to
+
40
V
V
IN
I
O
50
mA
I
C (Max.)
100
Tj
150
°
C
°
C
Tstg
55
to
+
150
Pd
mW
300 (TOTAL)
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
200mW per element must not be exceeded.
z
Electrical characteristics
(Ta=25
°
C)
DTr
1
Parameter
Power dissipation
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
R
1
G
I
R
2
/R
1
f
T
Min.
3
56
0.7
8
1
10
200
0.3
0.3
7.2
0.5
1.3
12
V
V
CC
=
5V, I
O
=
100
μ
A
V
O
=
0.3V, I
O
=
20mA
I
O
/I
I
=
50mA/
2.5mA
V
I
=
5V
V
CC
=
50V, V
I
=0V
V
O
=
5V, I
O
=
50mA
V
CE
=
10V
,
I
E
=50mA
,
f=100MHz
V
mA
μ
A
k
MHz
Typ.
Max.
Unit
Conditions
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Resistance ratio
Transition frequency
Transition frequency of the device
DT
r2
Parameter
Symbol
I
I
R
1
G
I
R
2
/R
1
Min.
3
7
30
0.8
0.1
10
1
0.5
0.3
0.88
0.5
13
1.2
V
V
CC
=
5V, I
O
=
100
μ
A
V
O
=
0.3V, I
O
=10
mA
I
O
=
10mA, I
I
=
0.5mA
V
I
=
5V
V
CC
=
50V, V
I
=
0V
V
O
=
5V, I
O
=
5mA
V
CE
=
10V, I
E
=
5mA, f
=
100MHz
V
mA
μ
A
k
Typ.
Max.
Unit
Conditions
V
I (off)
V
I (on)
V
O (on)
I
O (off)
f
T
250
MHz
Transition frequency of the device
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Transition frequency
Resistance ratio
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