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參數(shù)資料
| 型號(hào)： | IMD2AT110 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | General purpose (dual digital transistors) |
| 中文描述： | 通用（雙數(shù)字晶體管） |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 83K |
| 代理商： | IMD2AT110 |
EMD2 / UMD2N / IMD2A
Transistors
General purpose
(dual digital transistors)
EMD2 / UMD2N / IMD2A
z
Features
z
External dimensions
(Unit : mm)
1) Both the DTA124E chip and DTC124E chip in a EMT
or UMT or SMT package.
2) Mounting possible with EMT6 or UMT6 or SMT6
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
z
Structure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
The following characteristics apply to both the DTr
1
and
DTr
2
, however, the “
” sign on DTr
2
values for the PNP
type have been omitted.
z
Equivalent circuit
IMD2A
Rev.A
1/3
EMD2 / UMD2N
IMD2A
DTr
2
DTr
1
(3)
(2)
(1)
(3)
(2)
(1)
(4)
(5)
R
2
(6)
(4)
(5)
(6)
R
1
R
2
R
2
R
1
DTr
2
DTr
1
R
1
R
2
R
1
R
2
=22k
R
1
=22k
R
2
=22k
R
1
=22k
z
Absolute maximum ratings
(Ta = 25
°
C)
ROHM : EMT6
EMD2
ROHM : UMT6
EIAJ : SC-88
UMD2N
Abbreviated symbol : D2
Abbreviated symbol : D2
Abbreviated symbol : D2
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
Each lead has same dimensions
Each lead has same dimensions
0
(
2
1
0
0
0
0.1Min.
2.1
0
0
1.25
(
0
(
(
(
(
(
(
(
0.3to0.6
0
0
1
0
0
(
2.8
1.6
1
2
0
0
(
(
0
1.2
1.6
(1)
(2)
(5)
(3)
(6)
(4)
0
0
0
0
1
1
Parameter
Symbol
Limits
Unit
V
CC
50
V
40
V
V
IN
10
I
O
30
mA
I
C (Max.)
100
Tj
150
C
Tstg
55 to
+
150
C
Pd
EMD2, UMD2N
150 (TOTAL)
mW
IMD2A
300 (TOTAL)
1
2
Supply voltage
Input voltage
Output current
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Power
dissipation
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