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參數(shù)資料
| 型號(hào)： | IL3222E |
| 廠商： | NVE Corp/Isolation Products |
| 文件頁(yè)數(shù)： | 3/18頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | TXRX ISO BUS 1MBS RS422 16SOIC |
| 產(chǎn)品培訓(xùn)模塊： | IsoLoop® Isolator |
| 產(chǎn)品目錄繪圖： | IL3122, 3222, 3422 Circuit |
| 特色產(chǎn)品： | Wide-Body SOIC-16 Isolators |
| 標(biāo)準(zhǔn)包裝： | 50 |
| 系列： | IsoLoop® |
| 類型： | 收發(fā)器，隔離式 |
| 驅(qū)動(dòng)器/接收器數(shù)： | 1/1 |
| 規(guī)程： | RS422 |
| 電源電壓： | 3.3V，5V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-SOIC |
| 包裝： | 管件 |
| 產(chǎn)品目錄頁(yè)面： | 2771 (CN2011-ZH PDF) |
| 其它名稱： | 390-1098-5 |
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IL3285/IL3222
11
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
www.isoloop.com
iso-info@nve.com
NVE Corporation
Fail-Safe Biasing
R
B
V
DD
200K
GND
A
5 V
R
FS-EXT
R
T
R
T
R
FS-EXT
R
FS-INT
R
FS-INT
200K
IL32xx
Fail-Safe
RT
Loading
Operation?
None
Four eighth-unit loads (96 k ea.)
283 mV
Yes
120
Four eighth-unit loads (96 k ea.)
1 mV
No
560
120
Four eighth-unit loads (96 k ea.)
254 mV
Yes
510
120
256 eighth-unit loads (96 k ea.)
243 mV
Yes
Nominal VA-B
(inactive)
RFS-EXT
Internal Only
Power Supply Decoupling
Both VDD1 and VDD2 should be bypassed with 47 nF low-ESR ceramic capacitors. These should be placed as close as possible to
VDD pins. VDD2 should also be bypassed with a 10 F tantalum capacitor.
Maintaining Creepage
Creepage distances are often critical in isolated circuits. In addition to meeting JEDEC standards, NVE isolator packages have
unique creepage specifications. Standard pad libraries often extend under the package, compromising creepage and clearance.
Similarly, ground planes, if used, should be spaced to avoid compromising clearance. Package drawings and recommended pad
layouts are included in this datasheet.
Magnetic Field Immunity
IsoLoop Isolators operate by imposing a magnetic field on a GMR sensor, which translates the change in field into a change in
logic state. A magnetic shield and a Wheatstone Bridge configuration provide good immunity to external magnetic fields.
Immunity to external magnetic fields can be enhanced by proper orientation of the device with respect to the field direction and
larger boost capacitors.
An applied field in the “H1” direction is the worst case for magnetic immunity. In this case the external field is in the same
direction as the applied internal field. In one direction it will tend to
help switching; in the other it will hinder switching. This can cause
unpredictable operation.
An applied field in the direction of “H2” has considerably less effect on
the sensor and will result in significantly higher immunity levels as
shown in Table 1.
The greatest magnetic immunity is achieved by adding a larger boost
capacitor across the input resistor. Very high immunity can be achieved
with this method.
Figure 3. Orientation of External Magnetic Field
V
DD1
V
COIL2
GND
1
V
COIL1
GND
2
R
NC
RE
B
DE
A
D
V
DD2
NC
GND
1
GND
2
H1
H2
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