參數(shù)資料
型號(hào)： IFN5433
英文描述： TRANSISTOR | JFET | N-CHANNEL | DUAL | 100MA I(DSS) | TO-78
中文描述： 晶體管|場效應(yīng)| N溝道|雙| 100mA的我（直）|到78
文件頁數(shù)： 1/1頁
文件大小： 93K
代理商： IFN5433
01/99
B-45
IFN5432, IFN5433, IFN5434
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at T
A
= 25C
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 25 V
100 mA
300 mW
2.4 mW/°C
TOD52 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature:
Static Electrical Characteristics
IFN5432
IFN5433
IFN5434
Process NJ903
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
– 25
– 25
– 25
V
pA
nA
V
mA
pA
nA
mV
I
G
= – 1μA, V
DS
= V
V
GS
= – 15V, V
DS
= V
V
GS
= – 15V, V
DS
= V
V
DS
= 5V, I
G
= 3 nA
V
DS
= 15V, V
GS
= V
V
DS
= 5V, V
GS
= – 10V
V
DS
= 5V, V
GS
= – 10V
V
GS
= V, I
D
= 10 mA
V
DS
= V, I
D
= 10 mA
Gate Reverse Current
I
GSS
– 200
– 200
– 10
– 200
– 200
– 9
– 200
– 200
– 4
T
A
= 150°C
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
V
GS(OFF)
I
DSS
– 4
150
– 3
100
– 1
30
Drain Cutoff Current
I
D(OFF)
200
200
50
5
200
200
70
7
200
200
100
10
T
A
= 150°C
Drain Source ON Voltage
Static Drain Source ON Resistance
V
DS
r
DS(ON)
2
Dynamic Electrical Characteristics
Drain Source ON Resistance
Common Source Input Capacitance
r
ds(on)
C
iss
5
60
7
60
10
60
pF
V
GS
= V, I
D
= A
V
DS
= V, V
GS
= – 10V
f = 1 kHz
f = 1 MHz
Common Source Reverse
Transfer Capacitance
C
rss
20
20
20
pF
V
DS
= V, V
GS
= – 10V
f = 1 MHz
Switching Characteristics
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
4
1
6
30
4
1
6
30
4
1
6
30
ns
ns
ns
ns
V
DD
= 1.5 V, V
GS(ON)
= V
V
GS(OFF)
= – 12V, I
D(ON)
= 10 mA
(IFN5432)
R
L
= 145
(IFN5433)
R
L
= 143
(IFN5433)
R
L
= 140
￥ Analog Low On Resistance
Switches
￥ Choppers
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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