參數(shù)資料
型號(hào)： IFN5566
英文描述： TRANSISTOR | JFET | N-CHANNEL | DUAL | 5MA I(DSS) | TO-78
中文描述： 晶體管|場(chǎng)效應(yīng)| N溝道|雙| 5mA的我（直）|到78
文件頁(yè)數(shù)： 1/1頁(yè)
文件大?。?/td> 95K
代理商： IFN5566
B-46
01/99
IFN5564, IFN5565, IFN5566
N-Channel Dual Silicon Junction Field-Effect Transistor
￥ Wide Band Differential
Amplifier
￥ Commutators
Absolute maximum ratings at T
A
= 25C.
Reverse Gate Source & Reverse Gate Drain Voltage
Continuous Forward Gate Current
Continuous Device Power Dissipation
Power Derating
– 40 V
50 mA
650 mW
3.3 mW/°C
TOD71 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Omitted,
5 Source, 6 Drain, 7 Gate, 8 Omitted
At 25°C free air temperature:
Static Electrical Characteristics
IFN5564
IFN5565
IFN5566
Process NJ72
Min
Max
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V
(BR)GSS
– 40
– 40
– 40
V
pA
nA
V
V
mA
I
G
= – 1μA, V
DS
= V
V
GS
= – 20V, V
DS
= V
Gate Leakage Voltage
I
GSS
– 100
– 200
– 3
1
30
100
– 100
– 200
– 3
1
30
100
– 100
– 200
– 3
1
30
100
T
A
= 150°C
Gate Source Cutoff Voltage
Gate Source Voltage
Saturation Current (Pulsed)
Static Drain Source ON Resistance
V
GS(OFF)
V
GS(f)
I
DSS
rDS
(ON)
– 0.5
– 0.5
– 0.5
V
DS
= 15V, I
D
= 1 nA
V
DS
= V, I
G
= 2 mA
V
DS
= 15V, V
GS
= V
I
D
= 1 mA, V
GS
= V
5
5
5
Dynamic Electrical Characteristics
Common Source
Forward Transconductance
g
fs
7000 12500 7000 12500 7000 12500 μhmo
7000
7000
45
45
12
12
3
3
V
DG
= 15V, I
D
= 2 mA
f = 1 kHz
f = 100 MHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
7000
μhmo
μhmo
pF
pF
Common Source Output Transconductance
Common Source Input Capacitance
Common Source Reverse Transfer Capacitance
C
rss
g
os
C
iss
45
12
3
V
DS
= 15V, I
D
= 2 mA
V
DS
= 15V, I
D
= 2 mA
V
DS
= 15V, I
D
= 2 mA
V
DS
= 15V, I
D
= 2 mA
R
G
= 1 M
V
DG
= 15V, I
D
= 2 mA
Noise Figure
NF
1
1
1
dB
f = 10 Hz
Equivalent Short Circuit Input Noise Voltage
ˉ
N
50
50
50
nV/
√
Hz
f = 10 Hz
Characteristics
Saturation Drain Current Ratio (Pulsed)
I
DSS1
I
DSS2
0.95
1
0.95
1
0.95
1
–
–
V
DG
= 15V, V
GS
= V
Differential Gate Source Voltage
|V
GS(1)
– V
GS(2)
|
|V
GS(f)
– V
GS(f)
|
T
g
fs(1)
g
fs(2)
5
10
10
1
10
25
25
1
20
50
50
1
mV
μV/°C
μV/°C
–
–
V
DS
= 15V, I
D
= 2 mA
V
DS
= 15V,
I
D
= 2 mA
V
DS
= 15V, I
D
= 2 mA
Gate Source Voltage Differential Drift
T
A
= 25°C T
B
= 125°C
T
A
= 55°C T
B
= 25°C
Transconductance Ratio (Pulsed)
0.95
0.9
0.9
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
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