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參數(shù)資料
| 型號： | IDT70125L |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | Low-Power JFET-Input Operational Amplifier 8-SOIC 0 to 70 |
| 中文描述： | 高速2K × 9雙端口靜態(tài)RAM繁忙 |
| 文件頁數(shù)： | 10/12頁 |
| 文件大小： | 168K |
| 代理商： | IDT70125L |
6.10
10
IDT 70121/70125S/L
HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
COMMERCIAL TEMPERATURE RANGE
t
INS
ADDR
'A'
INT
'B'
INTERRUPT SET ADDRESS
t
WC
t
AS
R/
W
'A'
t
WR
2654 drw 14
(2)
(3)
(3)
(4)
NOTES:
.
1. All timing is the same for left and right ports. Port 'A' may be either left or right port. Port 'B' is the opposite from port 'A'.
2. See Interupt Truth Table.
3. Timing depends on which enable signal (
CE
or R/
W
) is asserted last.
4. Timing depends on which enable signal (
CE
or R/
W
) is de-asserted first.
TIMING WAVEFORM OF INTERRUPT MODE
TRUTH TABLES
TRUTH TABLE I –
NON-CONTENTION READ/WRITE CONTROL
(4)
TRUTH TABLE II – INTERRUPT FLAG
(1,4)
Left Port
OE
L
Right Port
R
X
L
L
X
R/
W
L
L
X
X
X
CE
L
L
X
X
L
A
0L
– A
10L
7FF
X
X
7FE
INT
L
X
X
L
(3)
H
(2)
R/
W
R
X
X
L
X
CE
OE
R
X
L
X
X
A
0L
– A
10R
X
7FF
7FE
X
INT
R
L
(2)
H
(3)
X
X
Function
X
X
X
L
Set Right
INT
R
Flag
Reset Right
INT
R
Flag
Set Left
INT
L
Flag
Reset Left
INT
L
Flag
NOTES
:
1. Assumes
BUSY
L
=
BUSY
R
= V
IH
2. If
BUSY
L
= V
IL
, then No Change.
3. If
BUSY
R
= V
IL
, then No Change.
4. 'H' = V
IH
,' L' = V
IL
,' X' = DON’T CARE.
2654 tbl 13
Left or Right Port
(1)
R/
W
CE
X
H
OE
X
D
0–8
Z
Function
Port Disabled and in Power-
Down Mode, I
SB2
or I
SB4
CE
R
=
CE
L
= H, Power-Down
Mode, I
SB1
or I
SB3
Data on Port Written Into Memory
(2)
DATA
OUT
Data in Memory Output on Port
(3)
Z
High-impedance Outputs
X
H
X
Z
L
H
H
L
L
L
X
L
H
DATA
IN
NOTES:
1. A
0L
– A
10L
≠
A
0R
– A
10R
.
2. If
BUSY
= V
IL
, data is not written.
3. If
BUSY
= V
IL
, data may not be valid, see t
WDD
and t
DDD
timing.
4. 'H' = V
IH
, 'L' = V
IL
, 'X' = DON’T CARE, 'Z' = High-impedance.
2654 tbl 12
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| IDT70125L25J | 功能描述:IC SRAM 18KBIT 25NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT70125L25J8 | 功能描述:IC SRAM 18KBIT 25NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT70125L25JG | 功能描述:IC SRAM 18KBIT 25NS 52PLCC RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT70125L25JG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18KBIT 25NS 52PLCC |
| IDT70125L25JGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
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