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參數(shù)資料
| 型號： | IDT70121S45J |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| 中文描述： | 2K X 9 DUAL-PORT SRAM, 45 ns, PQCC52 |
| 封裝： | 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 168K |
| 代理商： | IDT70121S45J |
6.10
3
IDT 70121/70125S/L
HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
COMMERCIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1,4)
(V
CC
= 5V
±
10%)
70121X25
70125X25
Typ. Max. Typ. Max. Typ. Max. Typ. Max. Unit
70121X35
70125X35
70121X45
70125X45
70121X55
70125X55
Test
Symbol
Parameter
Condition
Version
I
CC
Dynamic Operating
Current (Both Ports
Active)
CE
= V
IL
,Outputs Open,
f = f
MAX(2)
Com’l.
S
L
125
125
260
220
125
125
250
210
125
125
245
205
125
125
240
200
mA
I
SB1
Standby Current
(Both Ports—TTL
Level Inputs)
CE
"A"
and
CE
"B"
= V
IH
,
f = f
MAX(2)
Com’l.
S
L
30
30
65
45
30
30
65
45
30
30
65
45
30
30
65
45
mA
I
SB2
Standby Current
(One Port—TTL
Level Inputs)
CE
"A"
=V
IL
and
CE
"B"
=V
IH(5)
Active Port Outputs Open,
f = f
MAX(2)
Com’l.
S
L
80
80
175
145
80
80
165
135
80
80
160
130
80
80
155
125
mA
I
SB3
Full Standby
Current (Both Ports
CMOS Level Inputs)
CE
"A"
and
CE
"B"
≥
V
CC
– 0.2V,
V
IN
≥
V
CC
– 0.2V
or V
IN
≤
0.2V, f = 0
(3)
CE
"A"
<0.2V and
CE
"B"
>VCC-0.2V
(5
)
V
IN
≥
V
CC
– 0.2V or
V
IN
≤
0.2V, Active Port
Outputs Open, f = f
MAX(2)
Com’l.
S
L
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
mA
I
SB4
Full Standby
Current (One Port
CMOS Level Inputs)
Com’l.
S
L
70
70
170
140
70
70
160
130
70
70
155
125
70
70
150
120
mA
NOTES:
1. “X” in part numbers indicates power rating (S or L).
2. At f = f
MAX
, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/t
RC
, and using “AC TEST
CONDITIONS” of input levels of GND to 3V.
3. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby.
4. Vcc=5V, T
A
=+25
°
C for Typical values, and they are not production tested.
5. Port "A" may be either left or right port. Port "B" is opposite from port "A".
2654 tbl 05
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
70121S
70125S
Min.
—
70121L
70125L
Min.
—
Symbol
|I
LI
|
Parameter
Test Condition
V
CC
= 5.5V, V
IN
= 0V to V
CC
Max.
10
Max. Unit
5
Input Leakage Current
(5)
Output Leakage Current
(5)
μ
A
μ
A
|I
LO
|
V
CC
= 5.5V,
CE
= V
IH
V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= –4mA
—
10
—
5
V
OL
V
OH
Output Low Voltage
Output High Voltage
—
2.4
0.4
—
—
2.4
0.4
—
V
V
2654 tbl 04
NOTE:
1. At Vcc < 2.0V leakages are undefined.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70121S45JG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121S45JGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT |
| IDT70121S45L52 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM |
| IDT70121S45L52B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x9 Dual-Port SRAM |
| IDT70121S55J | 功能描述:IC SRAM 18KBIT 55NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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