參數(shù)資料
型號(hào): IDT70121
廠商: Integrated Device Technology, Inc.
英文描述: Low-Power JFET-Input Operational Amplifier 8-SOIC 0 to 70
中文描述: 高速2K × 9雙端口靜態(tài)RAM繁忙
文件頁(yè)數(shù): 5/12頁(yè)
文件大小: 168K
代理商: IDT70121
6.10
5
IDT 70121/70125S/L
HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
COMMERCIAL TEMPERATURE RANGE
TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE
(1,2,4)
ADDRESS
DATA
OUT
t
RC
t
OH
PREVIOUS DATA VALID
t
AA
t
OH
DATA VALID
2654 drw 05
t
BDD
(3,4)
BUSY
OUT
NOTES:
1. Timing depends on which signal is aserted last,
OE
or
CE
.
2. Timing depends on which signal is deaserted first,
OE
or
CE
.
3. t
BDD
delay is required only in a case where the opposite port is completing
a write operation to the same address location. For simultanious read operations
BUSY
has no relationship to valid output data.
4. Start of valid data depends on which timing becomes effective last, t
AOE
,
t
ACE
,
t
AA
, or
t
BDD
.
5. R/
W
= V
IH,
and the address is valid prior to other coincidental with
CE
transition Low.
6. R/
W
= V
IH,
CE
= V
IL, and
OE
= V
IL.
Address is valid prior to or coincident with
CE
transition Low.
CE
t
ACE
t
AOE
t
HZ
t
LZ
t
PD
VALID DATA
t
PU
50%
OE
DATA
OUT
CURRENT
I
CC
I
SS
50%
2654 drw 06
(4)
t
LZ
t
HZ
(1)
(1)
(4)
(2)
(2)
TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE
(5,6)
相關(guān)PDF資料
PDF描述
IDT70121L HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70121S Low-Power JFET-Input Operational Amplifier 8-SOIC 0 to 70
IDT70125L Low-Power JFET-Input Operational Amplifier 8-SOIC 0 to 70
IDT70125L25J HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70125S HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70121L 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT
IDT70121L25J 功能描述:IC SRAM 18KBIT 25NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT70121L25J8 功能描述:IC SRAM 18KBIT 25NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT70121L25JG 功能描述:IC SRAM 18KBIT 25NS 52PLCC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI
IDT70121L25JG8 功能描述:IC SRAM 18KBIT 25NS 52PLCC RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:9M(256K x 36) 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP(14x14) 包裝:托盤 其它名稱:71V67703S75PFGI