參數(shù)資料
型號: IC62VV25616L-100B
英文描述: 256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM
中文描述: 256Kx16位1.8V和超低功耗CMOS靜態(tài)RAM
文件頁數(shù): 7/11頁
文件大?。?/td> 321K
代理商: IC62VV25616L-100B
Integrated Circuit Solution Inc.
LPSR019-0A 11/13/2001
7
IC62VV25616L
IC62VV25616LL
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACE
t
LZCE
t
HZOE
HIGH-Z
DATA VALID
t
HZB
ADDRESS
OE
CE
LB, UB
D
OUT
t
HZCE
t
BA
t
LZB
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE
,
CE,
UB
, or
LB
= V
IL
.
3. Address is valid prior to or coincident with
CE
LOW transitions.
AC WAVEFORMS
READ CYCLE NO. 2
(1,3)
(
OE
Controlled
)
AC TEST LOADS
READ CYCLE NO.1
(1,2)
(Address Controlled) (
CE = OE
= V
IL
,
UB
or
LB
= V
IL
)
DATA VALID
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
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