參數(shù)資料
型號(hào): IC42S16800-8TG
英文描述: RES 100K-OHM 5% 0.1W 200PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
中文描述: 4(2)M中的x 8(16)位× 4銀行(128 - Mbit的)同步動(dòng)態(tài)RAM
文件頁(yè)數(shù): 49/69頁(yè)
文件大小: 1118K
代理商: IC42S16800-8TG
IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
Integrated Circuit Solution Inc.
DR023-0E 6/11/2004
49
Random Row Write (Interleaving Banks) (2 of 2)
BS1=”L”, Bank C,D = Idle
T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 T13 T14 T15 T16 T17 T18 T19 T20 T21 T22
CLK
CKE
CS
RAS
CAS
WE
A10
ADD
DQM
DQ
tCK
Burst Length=8, CAS Latency=3
Activate
Command
Bank A
Write
Hi-Z
Command
Bank A
QAa7 QBa0
QAa0 QAa1 QAa2QAa3 QAa4 QAa5 QAa6
Activate
Command
Bank B
QAb2
QAb1
Activate
Command
Bank A
QBa2 QBa3 QBa4 QBa5 QBa6
QBa1
Write
Command
Bank B
RBa
tRP
High
tDPL
tDPL
QBb7 QAb0
QAb3
Write
Command
Bank A
Precharge
Command
Bank A
Precharge
Command
Bank B
*BS0
相關(guān)PDF資料
PDF描述
IC42S16800-6T 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800-6TG 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800-6TI 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800-6T(G) 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800-6TI(G) 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IC42S16800-8TI 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800-8TI(G) 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800-8TIG 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800D-6TL 制造商:Integrated Silicon Solution Inc 功能描述:128MB SYNCHRONOUS DRAM
IC42S16800D-7TL 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM