參數資料
型號: IC42S16800-8TG
英文描述: RES 100K-OHM 5% 0.1W 200PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
中文描述: 4(2)M中的x 8(16)位× 4銀行(128 - Mbit的)同步動態(tài)RAM
文件頁數: 24/69頁
文件大?。?/td> 1118K
代理商: IC42S16800-8TG
IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
24
Integrated Circuit Solution Inc.
DR023-0E 6/11/2004
Write to Read Command Interval
The write command to read command interval is also a minimum of 1 cycle. Only the write data before the read command
will be written. The data bus must be Hi-Z at least one cycle prior to the first D
OUT
.
WRITE to READ Command Interval
Burst lengh=4
CLK
Command
CA
S
l
a
t
e
n
cy
=
2
DQ
Command
CA
S
l
a
t
e
n
cy
=
3
DQ
QB0
QB3
QB2
QB1
WRITE A
Write A
T0
T1
T2
T3
T4
T5
T6
T7
T8
QB0
QB3
QB2
QB1
1 cycle
Read B
DA0
Read B
DA0
Hi-Z
Hi-Z
Read to Write Command Interval
During a read cycle, READ can be interrupted by WRITE.
DQM must be in High at least 3 clocks prior to the write command. There is a restriction to avoid a data conflict. The data
bus must be Hi-Z using DQM before Write.
相關PDF資料
PDF描述
IC42S16800-6T 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800-6TG 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800-6TI 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800-6T(G) 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800-6TI(G) 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
相關代理商/技術參數
參數描述
IC42S16800-8TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800-8TI(G) 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800-8TIG 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S16800D-6TL 制造商:Integrated Silicon Solution Inc 功能描述:128MB SYNCHRONOUS DRAM
IC42S16800D-7TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM