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參數(shù)資料
| 型號： | HZS3.0NB2 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | CAP OXI NIOB 22UF 10V 20% SMD |
| 中文描述： | 硅外延平面齊納二極管穩(wěn)壓電源 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 57K |
| 代理商： | HZS3.0NB2 |
Rev.1.00, Mar.11.2004, page 1 of 6
HZS-N Series
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0185-0100Z
(Previous: ADE-208-124)
Rev.1.00
Mar.11.2004
Features
Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc.
Wide spectrum from 1.88 V through 38.52 V of zener voltage provide flexible application.
Suitable for 5mm-pitch high speed automatic insertion.
Ordering Information
Type No.
HZS-N Series
Mark
Type No.
Package Code
MHD
Pin Arrangement
1. Cathode
2. Anode
Cathode band
Type No.
1
2
2
B
7
相關PDF資料 |
PDF描述 |
|---|---|
| HZS20NB2 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HZS30NB2 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HZS39NB1 | DIODE ZENER SINGLE 350mW 18Vz 7mA-Izt 0.05 0.1uA-Ir 14 SOT-23 3K/REEL |
| HZS39NB2 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| HZS39NB3 | DIODE ZENER DUAL ISOLATED 200mW 18Vz 7mA-Izt 0.05 0.1uA-Ir 14 SOT-363 3K/REEL |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HZS30N-B2(TD-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| HZS30NB3 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS30N-B3(TD-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| HZS30NB4 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
| HZS33 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply |
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