參數(shù)資料
型號(hào): HYS72D128520GR-7F-B
廠商: INFINEON TECHNOLOGIES AG
英文描述: Connector Wall Plate; Color:Almond; Leaded Process Compatible:Yes; No. of Ports:2 RoHS Compliant: Yes
中文描述: 注冊(cè)DDR SDRAM內(nèi)存模塊
文件頁(yè)數(shù): 19/39頁(yè)
文件大?。?/td> 1036K
代理商: HYS72D128520GR-7F-B
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B
Registered DDR SDRAM-Modules
Electrical Characteristics
Data Sheet
19
Rev. 1.03 2004-01
Address and control input setup
time
t
IS
1.1
0.9
0.9
ns
fast slew rate
3)4)5)6)10)
1.1
1.0
1.0
ns
slow slew rate
3)4)5)6)10)
Address and control input hold
time
t
IH
1.1
0.9
0.9
ns
fast slew rate
3)4)5)6)10)
1.1
1.0
1.0
ns
slow slew rate
3)4)5)6)10)
Read preamble
Read preamble setup time
Read postamble
Active to Precharge command
Active to Active/Auto-refresh
command period
Auto-refresh to Active/Auto-
refresh command period
Active to Read or Write delay
Precharge command period
Active to Autoprecharge delay
Active bank A to Active bank B
command
Write recovery time
Auto precharge write recovery +
precharge time
Internal write to read command
delay
Exit self-refresh to non-read
command
Exit self-refresh to read
command
Average Periodic Refresh
Interval
t
RPRE
t
RPRES
t
RPST
t
RAS
t
RC
0.9
1.5
0.40 0.60
50
70
1.1
0.9
NA
0.40
1.1
0.9
NA
0.40
1.1
0.60
120E+3
t
CK
t
CK
t
CK
ns
CL > 1.5
2)3)4)5)
2)3)4)5)11)
0.60
120E+3 45
2)3)4)5)
120E+3 45
2)3)4)5)
65
65
ns
2)3)4)5)
t
RFC
80
75
75
ns
2)3)4)5)
t
RCD
t
RP
t
RAP
t
RRD
20
20
20
15
20
20
20
15
20
20
20
15
ns
ns
ns
ns
2)3)4)5)
2)3)4)5)
2)3)4)5)
2)3)4)5)
t
WR
t
DAL
15
15
(
t
wr
/
t
CK
) + (
t
rp
/
t
CK
)
15
ns
t
CK
2)3)4)5)
2)3)4)5)12)
t
WTR
1
1
1
t
CK
CL > 1.5
2)3)4)5)
t
XSNR
80
75
75
ns
2)3)4)5)
t
XSRD
200
200
200
t
CK
2)3)4)5)
t
REFI
7.8
7.8
7.8
μ
s
2)3)4)5)13)
1) 0
°
C
T
A
70
°
C;
V
DDQ
= 2.5 V
±
0.2 V,
V
DD
= +2.5 V
±
0.2 V
2) Input slew rate
1 V/ns for DDR266a, DDR266F and = 1 V/ns for DDR200
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference
level for signals other than CK/CK, is
V
REF
. CK/CK slew rate are
1.0 V/ns.
4) Inputs are not recognized as valid until
V
REF
stabilizes.
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is
V
TT
.
6) These parameters guarantee device timing, but they are not necessarily tested on each device.
7)
t
HZ
and
t
LZ
transitions occur in the same access time windows as valid data transitions. These parameters are not referred
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).
Table 12
Parameter
AC Timing - Absolute Specifications –8/–7/-7F
Symbol
–8
–7
–7F
Unit Note/
Test
Condition
1)
DDR200
Min. Max.
DDR266A
Min.
DDR266F
Min. Max.
Max.
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參數(shù)描述
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HYS72D128520GR-8-A 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:?1GB (128Mx72) PC1600 2-bank?
HYS72D128520GR-8-B 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Low Profile Registered DDR-I SDRAM-Modules
HYS72D128521GR-7-B 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Low Profile Registered DDR-I SDRAM-Modules
HYS72D128521GR-7F-B 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Low Profile Registered DDR-I SDRAM-Modules