參數(shù)資料
型號(hào): HYS64V16200GDL-7.5-D
廠商: INFINEON TECHNOLOGIES AG
英文描述: ?128MB PC133 (3-3-3) 1-bank ?
中文描述: ?128MB的PC133的(3-3-3)1銀行?
文件頁(yè)數(shù): 6/16頁(yè)
文件大?。?/td> 263K
代理商: HYS64V16200GDL-7.5-D
144 pin SO-DIMM SDRAM Modules
HYS64V16200GDL/HYS64V32220GDL
INFINEON Technologies
6
9.01
Absolute Maximum Ratings
DC Characteristics
T
A
= 0 to 70
o
C;
V
SS
= 0 V;
V
DD
= 3.3 V ± 0.3 V
Capacitance
T
A
= 0 to 70
o
C;
V
DD
= 3.3 V ± 0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input / Output voltage relative to V
SS
Power supply voltage on V
DD
Storage temperature range
V
IN,
V
OUT
V
DD
T
STG
P
D
I
OS
– 1.0
4.6
V
– 1.0
4.6
V
-55
+150
o
C
Power dissipation (per SDRAM component)
1
W
Data out current (short circuit)
50
mA
Permanent device damage may occur if
Absolute Maximum Ratings
are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Parameter
Symbol
Limit Values
Unit
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
Vcc+0.3
V
Input low voltage
0.5
0.8
V
Output high voltage (
I
OUT
=
4.0 mA)
Output low voltage (
I
OUT
= 4.0 mA)
Input leakage current, any input
(0 V <
V
IN
< 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
2.4
V
0.4
V
20
20
mA
I
O(L)
20
20
mA
Parameter
Symbol
Limit Values
Unit
16M x 64
max.
32M x 64
max.
C
I1
C
I2
C
I3
C
I4
C
I5
C
IO
C
sc
C
sd
28
52
pF
Input capacitance (RAS, CAS, WE, CKE0)
25
46
pF
Input Capacitance (CLK0, CLK1)
35
35
pF
Input capacitance (CS0)
25
30
pF
Input capacitance (DQMB0-DQMB7)
10
15
pF
Input / Output capacitance (DQ0-DQ63)
12
18
pF
Input Capacitance (SCL,SA0-2)
8
8
pF
Input/Output Capacitance
10
10
pF
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參數(shù)描述
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