參數(shù)資料
型號(hào): HYS64D64020GBDL-5-C
廠商: INFINEON TECHNOLOGIES AG
英文描述: 200-Pin Small Outline Dual-In-Line Memory Modules
中文描述: 200引腳小外型雙列直插內(nèi)存模塊
文件頁數(shù): 18/27頁
文件大?。?/td> 692K
代理商: HYS64D64020GBDL-5-C
Data Sheet
18
Rev. 1.1, 2004-05
HYS64D64020[H/G]BDL–[5/6]–C
Small Outline DDR SDRAM Modules
Electrical Characteristics
Table 12
Product Type
I
DD
Specification for HYS64D64020[G/H]BDL–6–C
HYS64D64020GBDL–6-–C
HYS64D64020HBDL–6–C
Organization
512MB
×
64
2 Ranks
–6
Symbol
Typ.
I
DD0
810
I
DD1
930
I
DD2P
400
I
DD2F
270
I
DD2Q
180
I
DD3P
510
I
DD3N
580
I
DD4R
970
I
DD4W
1010
I
DD5
300
I
DD6
16
I
DD7
1730
Unit
Note
1)2)
1) Module
I
DD
values are calculated on the basis of component
I
DD
and can be measured differently according to DQ
loading capacity.
2) Test condition for maximum values:
V
DD
= 2.7 V,
T
A
= 10 °C
3) The module
I
DDx
values are calculated from the
I
DDx
values of the component data sheet as follows:
m
×
I
DDx
[component] +
n
×
I
DD3N
[component] with
m
and
n
number of components of rank 1 and 2;
n
=0 for 1 rank
modules
4) DQ I/O (
I
DDQ
) currents are not included in the calculations (see note 1)
5) The module
I
DDx
values are calculated from the corrponent
I
DDx
data sheet values as: (
m
+
n
)
×
I
DDx
[component]
Max.
960
1120
480
380
240
610
720
1160
1240
380
17.6
2080
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
3)
3)4)
5)
5)
5)
5)
5)
3)4)
3)
3)
5)
3)4)
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