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    參數(shù)資料
    型號(hào): HYMP112S64MP8-E4
    廠商: Hynix Semiconductor Inc.
    英文描述: SCREW LOCKS FEMALE SETS
    中文描述: DDR2 SDRAM的SO - DIMM插槽
    文件頁數(shù): 2/17頁
    文件大小: 405K
    代理商: HYMP112S64MP8-E4
    This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
    responsibility for use of circuits described. No patent licenses are implied.
    Rev. 0.1/ July 2004
    2
    128Mx64 bits
    DDR2 SDRAM SO-DIMM
    HYMP112S64(L)MP8
    DESCRIPTION
    Hynix HYMP112S64MP8 series is unbuffered 200-pin double data rate 2 Synchronous DRAM Small Outline Dual In-Line Memory Mod-
    ules (DIMMs) which are organized as 128Mx64 high-speed memory arrays. Hynix HYMP112S64MP8 series consists of eight 128Mx8
    DDR2 SDRAMs in 63 ball FBGA Dual Die Pacakge(DDP)s. Hynix HYMP112S64MP8 series provide a high performance 8-byte interface
    in 67.60mm X 30.00mm form factor of industry standard. It is suitable for easy interchange and addition.
    Hynix HYMP512S64MP8 series is designed for high speed and offers fully synchronous operations referenced to both rising and falling
    edges of differential clock inputs. While all addresses and control inputs are latched on the rising edges of the clock, Data, Data
    strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 4-
    bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with SSTL_1.8. High speed frequen-
    cies, programmable latencies and burst lengths allow variety of device operation in high performance memory system.
    Hynix HYMP512S64MP8 series incorporates SPD(serial presence detect). Serial presence detect function is implemented via a serial
    2,048-bit EEPROM. The first 128 bytes of serial PD data are programmed by Hynix to identify DIMM type, capacity and other the
    information of DIMM and the last 128 bytes are available to the customer.
    FEATURES
    ORDERING INFORMATION
    Type
    Part No.
    Description
    CL-tRCD-tRP
    Form Factor
    PC2-3200 (DDR2-400)
    HYMP112S64(L)MP8-E4
    2 rank 1GB
    Lead-free SO-DIMM
    4-4-4
    200pin Unbuffered SO-
    DIMM
    67.60 mm x 30,00 mm
    (MO-224)
    HYMP112S64(L)MP8-E3
    3-3-3
    PC2-4300 (DDR2-533)
    HYMP112S64(L)MP8-C5
    5-5-5
    HYMP112S64(L)MP8-C4
    4-4-4
    1GB (128M x 64) Unbuffered DDR2 SO - DIMM based on
    128Mx8 DDR2 DDP SDRAMs
    JEDEC standard Double Data Rate2 Synchronous DRAMs
    (DDR2 SDRAMs) with 1.8V +/- 0.1V Power Supply
    All inputs and outputs are compatible with SSTL_1.8 inter-
    face
    OCD (Off-Chip Driver Impedance Adjustment) and ODT
    (On-Die Termination)
    Fully differential clock operations (CK & /CK)
    Programmable CAS Latency 3 / 4 /5 supported
    Programmable Burst Length 4 / 8 with both sequential and
    interleave mode
    Auto refresh and self refresh supported
    7.8us refresh period at Lower than T
    CASE
    85
    ,
    3.9us( 85
    T
    CASE
    ≤ 95℃)
    Serial Presence Detect(SPD) with EEPROM
    Lead free product
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