- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370795 > HYE25L256160AC (INFINEON TECHNOLOGIES AG) 256-Mbit Mobile-RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HYE25L256160AC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 256-Mbit Mobile-RAM |
| 中文描述： | 256兆移動(dòng)RAM |
| 文件頁數(shù)： | 25/55頁 |
| 文件大?。?/td> | 1053K |
| 代理商： | HYE25L256160AC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁當(dāng)前第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁
Data Sheet
25
V1.1, 2003-04-16
HYE25L256160AC
256-Mbit Mobile-RAM
Timing Diagrams
5
Timing Diagrams
Figure 5
Bank Activate Command Cycle
Figure 6
Burst Read Operation
Figure 7
Read Interrupted by a Read
Read to Write Interval
–
Figure 8
Read to Write Interval
–
Figure 9
Minimum Read to Write Interval
–
Figure 10
Non-Minimum Read to Write Interval
Figure 11
Burst Write Operation
Write and Read Interrupt
–
Figure 12
Write Interrupted by a Write
–
Figure 13
Write Interrupted by Read
Burst Write & Read with Auto-Precharge
–
Figure 14
Burst Write with Auto-Precharge
–
Figure 15
Burst Read with Auto-Precharge
AC- Parameters
–
Figure 16
AC Parameters for a Write Timing
–
Figure 17
AC Parameters for a Read Timing
Figure 18
Mode Register Set
Figure 19
Power on Sequence and Auto Refresh (CBR)
Clock Suspension (using CKE)
–
Figure 20
Clock Suspension During Burst Read CAS Latency = 2
–
Figure 21
Clock Suspension During Burst Read CAS Latency = 3
–
Figure 22
Clock Suspension During Burst Write CAS Latency = 2
–
Figure 23
Clock Suspension During Burst Write CAS Latency = 3
Figure 24
Power Down Mode and Clock Suspend
Figure 25
Self Refresh (Entry and Exit)
Figure 26
Auto Refresh (CBR)
Random Column Read ( Page within same Bank)
–
Figure 27
CAS Latency = 2
–
Figure 28
CAS Latency = 3
Random Column Write ( Page within same Bank)
–
Figure 29
CAS Latency = 2
–
Figure 30
CAS Latency = 3
Random Row Read (Interleaving Banks) with Precharge
–
Figure 31
CAS Latency = 2
–
Figure 32
CAS Latency = 3
Random Row Write (Interleaving Banks) with Precharge
–
Figure 33
CAS Latency = 2
–
Figure 34
CAS Latency = 3
Precharge Termination of a Burst
–
Figure 35
CAS Latency = 2
Deep Power Down Mode
–
Figure 36
Deep Power Down Mode Entry
–
Figure 37
Deep Power Down Mode Exit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYE25L256160AC-8 | 256-Mbit Mobile-RAM |
| HYE25L256160AF | 256MBit Mobile-RAM |
| HYE25L256160AF-75 | CAP TANT 10UF 6.3V 20% SMD |
| HYE25L256160AC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYM321000GS-60 | 1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYE25L256160AC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYE25L256160AC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-Mbit Mobile-RAM |
| HYE25L256160AC-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:256-Mbit Mobile-RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。