- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370793 > HYB5117405BT-50 (SIEMENS A G) 4M x 4-Bit Dynamic RAM 2k & 4k Refresh PDF資料下載
參數(shù)資料
| 型號： | HYB5117405BT-50 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| 中文描述： | 4M X 4 EDO DRAM, 50 ns, PDSO24 |
| 文件頁數(shù)： | 26/28頁 |
| 文件大?。?/td> | 323K |
| 代理商： | HYB5117405BT-50 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁當(dāng)前第26頁第27頁第28頁
Semiconductor Group
26
HYB5116(7)405BJ/BT-50/-60/-70
4M x 4-EDO DRAM
Test Mode
As the HYB 5116(7)405BJ/BT is organized internally as 1M x 16-bits, a test mode cycle using 4:1
compression can be used to improve test time. Note that in the 4M x 4 version the test time is
reduced by 1/4 for a N test pattern.
In a test mode “write” the data from each I/O pin is written into four 1M blocks simultaneously (all
“1” s or all “0” s). In test mode “read” each I/O output is used for indicating the test mode result. If
the internal four bits are equal, the I/O would indicate a “1”. If they were not equal, the I/O would
indicate a “0”. The WCBR cycle (WE, CAS before RAS) puts the device into test mode. To exit
from test mode, a “CAS before RAS refresh”, “RAS only refresh” or “Hidden refresh” can be
used.Refresh during test mode operation can be performed by normal read cycles or by WCBR
refresh cycles.
Row addresses A0 through A9 have to kept high to perform a testmode entry cycle. All other
addresses are don’t care.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB5116405BT-70 | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5116405BJBT-50- | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5116405BT-60 | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5117405BT-60 | RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 12V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88% |
| HYB5117405BT-70 | POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88% |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB5117405BT-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5117405BT-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5117800AJ-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
| HYB5117800AJ-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
| HYB5117800AJ-70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。