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| 型號(hào)： | HYB5116400BJ-50- |
| 廠商： | SIEMENS AG |
| 英文描述： | 4M x 4-Bit Dynamic RAM |
| 中文描述： | 4米× 4位動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
| 文件頁(yè)數(shù)： | 7/26頁(yè) |
| 文件大?。?/td> | 325K |
| 代理商： | HYB5116400BJ-50- |
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Semiconductor Group
7
HYB 5116400BJ/BT-50/-60/-70
4M x 4-DRAM
AC Characteristics
5)6)
16F
T
A
= 0 to 70 °C,
V
CC
= 5 V
±
10 %,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
-70
min.
max. min.
max. min.
max.
common parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
90
–
110
–
130
–
ns
RAS precharge time
30
–
40
–
50
–
ns
50
10k
60
10k
70
10k
ns
CAS pulse width
13
10k
15
10k
20
10k
ns
Row address setup time
0
–
0
–
0
–
ns
Row address hold time
8
–
10
–
10
–
ns
Column address setup time
0
–
0
–
0
–
ns
Column address hold time
10
–
15
–
15
–
ns
RAS to CAS delay time
18
37
20
45
20
50
RAS to column address delay
time
13
25
15
30
15
35
ns
RAS hold time
t
RSH
t
CSH
t
CRP
t
T
t
REF
13
15
–
20
–
ns
CAS hold time
50
60
–
70
–
ns
CAS to RAS precharge time
5
–
5
–
5
–
ns
Transition time (rise and fall)
3
50
3
50
3
50
ns
7
Refresh period
–
64
–
64
–
64
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
–
50
–
60
–
70
ns
8, 9
Access time from CAS
–
13
–
15
–
20
ns
8, 9
Access time from column address
t
AA
OE access time
–
25
–
30
–
35
ns
8,10
t
OEA
–
13
–
15
–
20
ns
Column address to RAS lead time
t
RAL
Read command setup time
25
–
30
–
35
–
ns
t
RCS
t
RCH
t
RRH
0
–
0
–
0
–
ns
Read command hold time
0
–
0
–
0
–
ns
11
Read command hold time
referenced to RAS
0
–
0
–
0
–
ns
11
CAS to output in low-Z
t
CLZ
t
OFF
0
–
0
–
0
–
ns
8
Output buffer turn-off delay
0
13
0
15
0
20
ns
12
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