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參數(shù)資料
| 型號： | HYB511000BJ-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| 中文描述： | 1M X 1 FAST PAGE DRAM, 60 ns, PDSO20 |
| 文件頁數(shù)： | 7/22頁 |
| 文件大小： | 192K |
| 代理商： | HYB511000BJ-60 |
Semiconductor Group
39
HYB 511000BJ/BJL-50/-60/-70
1 M
×
1-DRAM
AC Characteristics
4) 13)
T
A
= 0 to 70 C;
V
CC
= 5 V
±
10 %;
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit
-50
-60
-70
min.
max.
min.
max.
min.
max.
Random read or write
cycle time
t
RC
95
–
110
–
130
–
ns
Read-write cycle time
t
RWC
t
PC
115
–
130
–
155
–
ns
Fast page mode cycle
time
35
–
40
–
45
–
ns
Fast page mode read-
write cycle time
t
PRWC
55
–
60
–
70
–
ns
Access time from
RAS
6) 11)
t
RAC
–
50
–
60
–
70
ns
Access time from
CAS
6) 11)
t
CAC
–
15
–
15
–
20
ns
Access time from column
address
6) 12)
t
AA
–
25
–
30
–
35
ns
Access time from CAS
precharge
6)
t
CPA
–
30
–
35
–
40
ns
CAS to output in low-Z
6)
t
CLZ
0
–
0
–
0
–
ns
Output buffer turn-off
delay
7)
t
OFF
0
15
0
20
0
20
ns
Transition time
(rise and fall)
5)
t
T
3
50
3
50
3
50
ns
RAS precharge time
t
RP
t
RAS
t
RASP
35
–
40
–
50
–
ns
RAS pulse width
50
10.000
60
10.000
70
10.000
ns
RAS pulse width (fast
page mode)
50
100.000 60
100.000 70
100.000 ns
RAS hold time
t
RSH
t
CSH
t
RHCP
15
–
15
–
20
–
ns
CAS hold time
50
–
60
–
70
–
ns
RAS hold time from CAS
precharge (FPM)
30
–
35
–
45
–
ns
CAS precharge to WE
delay time (FPM RMW)
t
CPWD
30
–
35
–
45
–
ns
CAS pulse width
t
CAS
t
RCD
15
10.000
15
10.000
20
10.000
ns
RAS to CAS delay
time
11)
20
35
20
45
20
50
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB511000BJ-70 | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-50 | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-60 | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJ- | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-70 | 1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB511000BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJ-80 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x1 Fast Page Mode DRAM |
| HYB511000BJL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
| HYB511000BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1 M x 1-Bit Dynamic RAM Low Power 1 M ⅴ 1-Bit Dynamic RAM |
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