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參數(shù)資料
| 型號： | HYB39S512400AT |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 512-Mbit Synchronous DRAM |
| 中文描述： | 512兆位同步DRAM |
| 文件頁數(shù)： | 8/28頁 |
| 文件大?。?/td> | 718K |
| 代理商： | HYB39S512400AT |
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HYB 39S512[40/80/16]0AT(L)
512-Mbit Synchronous DRAM
Overview
Data Sheet
8
Rev. 1.3, 2004-03
10082003-L1GD-PVI5
1
Overview
1.1
Features
Fully Synchronous to Positive Clock Edge
0 to 70
°
C operating temperature
Four Banks controlled by BA0 & BA1
Programmable CAS Latency: 2 & 3
Programmable Wrap Sequence: Sequential or Interleave
Programmable Burst Length: 1, 2, 4, 8 and full page
Multiple Burst Read with Single Write Operation
Automatic and Controlled Precharge Command
Data Mask for Read / Write control (
×
4,
×
8)
Data Mask for byte control (
×
16)
Auto Refresh (CBR) and Self Refresh
Power Down and Clock Suspend Mode
8192 refresh cycles / 64 ms (7,8
μ
s)
Random Column Address every CLK ( 1-N Rule)
Single 3.3 V
±
0.3 V Power Supply
LVTTL Interface versions
Plastic Packages:
P-TSOPII-54 400mil width (x4, x8, x16)
1.2
Description
The HYB 39S512[40/80/16]0AT(L) are four bank Synchronous DRAM’s organized as 4 banks
×
32MBit
×
4, 4
banks
×
16MBit
×
8 and 4 banks
×
8Mbit
×
16 respectively. These synchronous devices achieve high speed data
transfer rates for CAS-latencies by employing a chip architecture that prefetches multiple bits and then
synchronizes the output data to a system clock. The chip is fabricated with INFINEON’s advanced 0.14
μ
m
512MBit DRAM process technology.
The device is designed to comply with all industry standards set for synchronous DRAM products, both electrically
and mechanically. All of the control, address, data input and output circuits are synchronized with the positive edge
of an externally supplied clock.
Operating the four memory banks in an interleave fashion allows random access operation to occur at higher rate
than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length,
CAS latency and speed grade of the device.
Auto Refresh (CBR) and Self Refresh operation are supported. These devices operates with a single 3.3 V
±
0.3 V
power supply. All 512Mbit components are housed in P-TSOPII-54 packages.
Table 1
Part Number Speed Code
Speed Grade
max. Clock Frequency
Performance
–
7
PC133 2–2–2
143
7
5.4
7.5
5.4
–
7.5
PC133 3–3–3
133
7.5
5.4
10
6
–
8
PC100 2–2–2
125
8
6
10
6
Unit
–
MHz
ns
ns
ns
ns
@CL3
f
CK
t
CK3
t
AC3
t
CK2
t
AC2
@CL2
相關PDF資料 |
PDF描述 |
|---|---|
| HYB39S512400ATL | 512-Mbit Synchronous DRAM |
| HYB39S64160BT-7.5 | Safety Goggle; Pack Quantity:1 RoHS Compliant: NA |
| HYB39S64160BT-8 | Safety Goggle; Pack Quantity:1 RoHS Compliant: NA |
| HYB39S64400BT-7.5 | Faceshield Kit RoHS Compliant: NA |
| HYB39S64400BT-8 | Replacement Visor RoHS Compliant: NA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S512400AT-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512-Mbit Synchronous DRAM |
| HYB39S512400AT-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:512-Mbit Synchronous DRAM |
| HYB39S512400AT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512-Mbit Synchronous DRAM |
| HYB39S512400ATL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:512-Mbit Synchronous DRAM |
| HYB39S512800AE-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:512-Mbit Synchronous DRAM |
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