參數(shù)資料
型號(hào): HYB39S256400DT-75
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256 MBit Synchronous DRAM
中文描述: 256兆位同步DRAM
文件頁(yè)數(shù): 16/22頁(yè)
文件大?。?/td> 564K
代理商: HYB39S256400DT-75
INFINEON Technologies
16
2002-04-23
HYB39S256400/800/160DT(L)/DC(L)
256MBit Synchronous DRAM
Absolute Maximum Ratings
Recommended Operation Conditions and DC Eletrical Characteristics
T
A
= 0 to 70
o
C;
Parameter
Symbol
Limit Values
Unit
min.
max.
Input / Output voltage relative to V
SS
Power supply voltage
V
IN,
V
OUT
V
DD,
V
DDQ
T
A
T
STG
P
D
I
OS
– 1.0
4.6
V
– 1.0
4.6
V
o
C
o
C
Operating Temperature
0
+70
Storage temperature range
-55
+150
Power dissipation per SDRAM component
1
W
Data out current (short circuit)
50
mA
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Parameter
Symbol
Limit Values
Unit Notes
min.
typ.
max.
Supply Voltage
V
DD,
V
DDQ
V
IH
V
IL
3.0
3.3
3.6
V
1
Input high voltage
2.0
3.0
V
DDQ
+0.3
0.8
V
1, 2
Input low voltage
Output high voltage
(
I
OUT
= – 4.0 mA)
V
OH
Output low voltage
(
I
OUT
= 4.0 mA)
Input leakage current, any input
(0 V
< V
IN
<
V
DD
, all other inputs = 0 V)
Output leakage current
(DQs are disabled, 0 V
< V
OUT
< V
DDQ
)
Notes:
1. All voltages are referenced to V
.
2. Vih may overshoot to V
+ 2.0 V for pulse width of
<
4ns with 3.3V. Vil may undershoot to -2.0 V for pulse
width
<
4.0 ns with 3.3V. Pulse width measured at 50
%
points with amplitude
reference.
– 0.3
0
V
1, 2
2.4
V
1
V
OL
I
IL
0.4
V
1
– 5
5
mA
I
OL
– 5
5
mA
measured peak to DC
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