參數(shù)資料
型號: HYB25R72180C-645
英文描述: RAMBUS DRAM
中文描述: Rambus的內(nèi)存
文件頁數(shù): 38/76頁
文件大?。?/td> 1218K
代理商: HYB25R72180C-645
HYB25D128400/800/160AT(L)
128-Mbit Double Data Rate SDRAM
Page 38 of 76
2002-05-06
Write to Read: Nominal DQSS, Interrupting (CAS Latency = 2; Burst Length = 8)
T1
T2
T3
T4
T5
T6
t
DQSS
(nom)
N
OP
N
OP
N
OP
Read
W
rite
N
OP
DI a-b = data in for bank a, column b.
An interrupted burst is shown, 4 data elements are written.
3 subsequent elements of data in are applied in the programmed order following DI a-b.
t
W
TR
is referenced from the first positive CK edge after the last desired data in pair.
The Read command masks the last 2 data elements in the burst.
A10 is Low with the
W
rite command (Auto Precharge is disabled).
The Read and
W
rite commands are not necessarily to the same bank.
1 = These bits are incorrectly written into the memory array if DM is low.
DI a-b
CK
CK
Command
Address
DQS
DQ
DM
Don’t Care
BAa, COL b
BAa, COL n
t
W
TR
CL = 2
1
1
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