參數(shù)資料
型號: HYB25R288180C-845
英文描述: DRAM|RAMBUS|16MX18|CMOS|BGA|66PIN|PLASTIC
中文描述: 內(nèi)存| Rambus公司| 16MX18 |的CMOS | BGA封裝| 66PIN |塑料
文件頁數(shù): 54/76頁
文件大?。?/td> 1218K
代理商: HYB25R288180C-845
HYB25D128400/800/160AT(L)
128-Mbit Double Data Rate SDRAM
Page 54 of 76
2002-05-06
..
Weak Mode Pulldown and Pullup Characteristics
Weak Strength Pulldown Characteristics
1. The weak pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve
2. The weak pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
3. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
4. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed
1.7, for device drain to source voltages from 0.1 to 1.0.
5. The full variation in the ratio of the nominal pullup to pulldown current should be unity
±
10
%
, for device
drain to source voltages from 0.1 to 1.0V.
Weak Strength Pullup Characteristics
0
10
20
30
40
50
60
70
80
0,0
0,5
1,0
1,5
2,0
2,5
Vout [V]
I
Maximum
Typical high
Typical low
Minimum
-80,0
-70,0
-60,0
-50,0
-40,0
-30,0
-20,0
-10,0
0,0
0,0
0,5
1,0
1,5
2,0
2,5
Vout [V]
I
Maximum
Typical high
Typical low
Minimum
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