參數(shù)資料
型號: HYB25R288180C-653
英文描述: DRAM|RAMBUS|16MX18|CMOS|BGA|66PIN|PLASTIC
中文描述: 內(nèi)存| Rambus公司| 16MX18 |的CMOS | BGA封裝| 66PIN |塑料
文件頁數(shù): 48/76頁
文件大?。?/td> 1218K
代理商: HYB25R288180C-653
HYB25D128400/800/160AT(L)
128-Mbit Double Data Rate SDRAM
Page 48 of 76
2002-05-06
Truth Table 5: Concurrent Auto Precharge
From Command
To Command
(different bank)
Minimum Delay with Con-
current Auto Precharge
Support
Units
W
RIT
E
w/AP
Read or Read w/AP
1
+
(BL/2)
+
t
W
TR
tCK
W
rite ot
W
rite w/AP
BL/2
tCK
Precharge or Activate
1
tCK
Read w/AP
Read or Read w/AP
BL/2
tCK
W
rite or
W
rite w/AP
CL (rounded up)
+
BL/2
tCK
Precharge or Activate
1
tCK
相關(guān)PDF資料
PDF描述
HYB25R288180C-745 DRAM|RAMBUS|16MX18|CMOS|BGA|66PIN|PLASTIC
HYB25R288180C-840 DRAM|RAMBUS|16MX18|CMOS|BGA|66PIN|PLASTIC
HYB25R288180C-845 DRAM|RAMBUS|16MX18|CMOS|BGA|66PIN|PLASTIC
HYB25R72180C-645 RAMBUS DRAM
HYB25R72180C-745 RAMBUS DRAM
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