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參數(shù)資料
| 型號： | HYB25R288180C-653 |
| 英文描述： | DRAM|RAMBUS|16MX18|CMOS|BGA|66PIN|PLASTIC |
| 中文描述： | 內(nèi)存| Rambus公司| 16MX18 |的CMOS | BGA封裝| 66PIN |塑料 |
| 文件頁數(shù)： | 17/76頁 |
| 文件大?。?/td> | 1218K |
| 代理商： | HYB25R288180C-653 |
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2002-05-06
Page 17 of 76
HYB25D128400/800/160AT(L)
128-Mbit Double Data Rate SDRAM
Truth Table 1a: Commands
N
ame (Function)
CS
RAS
CAS
WE
Address
M
NE
N
otes
Deselect (
N
op)
H
X
X
X
X
N
OP
1,
9
N
o Operation (
N
op)
L
H
H
H
X
N
OP
1,
9
Active (Select Bank And Activate Row)
L
L
H
H
Bank/Row
ACT
1, 3
Read (Select Bank And Column, And Start Read Burst)
L
H
L
H
Bank/Col
Read
1, 4
W
rite (Select Bank And Column, And Start
W
rite Burst)
L
H
L
L
Bank/Col
W
rite
1, 4
Burst Terminate
L
H
H
L
X
BST
1, 8
Precharge (Deactivate Row In Bank Or Banks)
L
L
H
L
Code
PR
E
1, 5
Auto Refresh Or Self Refresh (
E
nter Self Refresh Mode)
L
L
L
H
X
AR / SR
1, 6, 7
Mode Register Set
L
L
L
L
Op-Code
MRS
1, 2
1. CK
E
is
H
I
GH
for all commands shown except Self Refresh.
2. BA0, BA1 select either the Base or the
E
xtended Mode Register (BA0 = 0, BA1 = 0 selects Mode Register; BA0 = 1, BA1 = 0
selects
E
xtended Mode Register; other combinations of BA0-BA1 are reserved; A0-A11 provide the op-code to be written to the
selected Mode Register.)
3. BA0-BA1 provide bank address and A0-A11 provide row address.
4. BA0, BA1 provide bank address; A0-A
i
provide column address (where
i
= 8 for x16,
i
=
9
for x8 and
9
, 11 for x4); A10
H
I
GH
enables the Auto Precharge feature (nonpersistent), A10 LO
W
disables the Auto Precharge feature.
5. A10 LO
W
: BA0, BA1 determine which bank is precharged.
A10
H
I
GH
: all banks are precharged and BA0, BA1 are “Don’t Care.”
6. This command is AUTO R
E
FR
E
S
H
if CK
E
is
H
I
GH
; Self Refresh if CK
E
is LO
W
.
7. Internal refresh counter controls row and bank addressing; all inputs and I/Os are “Don’t Care” except for CK
E
.
8. Applies only to read bursts with Auto Precharge disabled; this command is undefined (and should not be used) for read bursts with
Auto Precharge enabled or for write bursts
9
. Deselect and
N
OP are functionally interchangeable.
Truth Table 1b: DM Operation
N
ame (Function)
DM
DQs
N
otes
W
rite
E
nable
L
Valid
1
W
rite Inhibit
H
X
1
1. Used to mask write data; provided coincident with the corresponding data.
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