- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370785 > HYB25L512160AC-7.5 (INFINEON TECHNOLOGIES AG) BJAWBMSpecialty DRAMs Mobile-RAM PDF資料下載
參數(shù)資料
| 型號： | HYB25L512160AC-7.5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | BJAWBMSpecialty DRAMs Mobile-RAM |
| 中文描述： | BJAWBMSpecialty DRAM的移動RAM |
| 文件頁數(shù)： | 13/50頁 |
| 文件大?。?/td> | 1335K |
| 代理商： | HYB25L512160AC-7.5 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當(dāng)前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁
HYB25L512160AC–7.5
512MBit Mobile-RAM
Functional Description
Data Sheet
13
Rev. 1.3, 2004-04
10212003-BSPE-77OL
After all power supply voltages are stable, and the clock is stable, the Mobile-RAM requires a 200μs delay prior to
applying a command other than DESELECT or NOP. CKE and DQM must be held high throughout the entire
power-up sequence. Once the 200μs delay has been satisfied, the following command sequence shall be applied
(see
Figure 4
):
a PRECHARGE ALL command;
at least 8 AUTO REFRESH commands;
two MODE REGISTER SET commands for the Mode Register and Extended Mode Register
Following these cycles, the Mobile-RAM is ready for normal operation.
V
DD
and V
DDQ
are driven from a single power converter output
V
DDQ
is driven after or with V
DD
such that V
DDQ
< V
DD
+ 0.3 V
3.2
Register Definition
3.2.1
The Mode Register is used to define the specific mode of operation of the Mobile-RAM. This definition includes
the selection of a burst length, a burst type, a CAS latency, and a write burst mode. The Mode Register is
programmed via the MODE REGISTER SET command (with BA0 = 0 and BA1 = 0) and will retain the stored
information until it is programmed again or the device loses power.
Mode Register
Figure 5
Mode Register Definition
Address bits A0-A2 specify the burst length, A3 the burst type, A4-A6 the CAS latency, A9 the write burst mode,
while bits A7-A8 and A10-A12 shall be written to zero.
A6
A5
A4
CAS Latency
0
0
0
Reserved
0
0
1
0
1
0
2
0
1
1
3
1
0
0
Reserved
1
0
1
1
1
0
1
1
1
A2
A1
A0
Burst Length
Sequential Interleave
0
0
0
1
1
0
0
1
2
2
0
1
0
4
4
0
1
1
8
8
1
0
0
Reserved
Reserved
1
0
1
1
1
0
1
1
1
full page
A9
Write Burst Mode
0
Burst Write
1
Single Write
BA1 BA0 A12 A11 A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Address Bus
0
0
0
0
0
WB
0
0
CAS Latency
BT
Burst Length
Mode Register
A3
Burst Type
0
Sequential
1
Interleave
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB25L512160AC | 512MBit Mobile-RAM |
| HYB25M128160C | 128-Mbit direct RDRAM(128 Mbit 直接 RDRAM) |
| HYB25R128160C | 128-MBit Direct RDRAM(128 M位直接RDRAM) |
| HYB 25M144180C | 144-MBit Direct RDRAM(144 M位直接RDRAM) |
| HYB25R144180C | 144-Mbit direct RDRAM(144 Mbit 直接 RDRAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3116160BSJ | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。