參數資料
型號: HYB18RL25616AC-5
英文描述: ?256M (16Mx16) 200MHz ?
中文描述: ?256M(16Mx16顯示)200MHz的?
文件頁數: 6/36頁
文件大小: 869K
代理商: HYB18RL25616AC-5
HYB18RL25616/32AC
256 Mbit DDR Reduced Latency DRAM
Version 1.42
Page 6
Infineon Technologies
This specification is preliminary and subject to change without notice
1.2
General Description
The Infineon 256M Reduced Latency DRAM (RLDRAM) contains 8 banks x 32 Mb of memory accessible
with 32bit or 16bit I/O’s in a double data rate (DDR) format where the data is provided and synchronized with
a differential echo clock signal. RLDRAM does not require row/column address multiplexing and is optimized
for fast random access and high data bandwidth.
RLDRAM is designed for communication data storages like transmit or receive buffers in telecommunication
systems as well as data or instruction cache applications requiring large amounts of memory.
1.3
Ball Configuration Package and Ballout
Figure 1
T-FBGA 144 package 256 Mbit DDR Reduced Latency DRAM
Note: All dimensions in mm
3
BOTTOM VIEW
4
0.8
8.8
11
1
1
1
12
11
10
9
8
7
6
5
4
2
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
1.20 max
SIDE VIEW
相關PDF資料
PDF描述
HYB18RL25632AC-3.3 ?256M (8Mx32) 300MHz ?
HYB18RL25632AC-5 ?256M (8Mx32) 200MHz ?
HYB25D128400AT-7 ?128Mb (32Mx4) DDR266A (2-3-3)?
HYB25R128160C-840 RAMBUS DRAM
HYB25R128160C-845 RAMBUS DRAM
相關代理商/技術參數
參數描述
HYB18T1G400AF-3.7 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 256M x 4, 68 Pin, Plastic, BGA
HYB18T1G400AF-5 制造商:Infineon Technologies AG 功能描述:256M X 4 DDR DRAM, 0.6 ns, PBGA68
HYB18T1G800BF-3S 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:60 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP(0.300",7.62mm) 供應商設備封裝:8-PDIP 包裝:管件 產品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T256400AF-3.7 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60
HYB18T256400AF-5 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA