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參數(shù)資料
| 型號： | HYB18L128160BF-7.5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | BJAWBMSpecialty DRAMs Mobile-RAM |
| 中文描述： | BJAWBMSpecialty DRAM的移動RAM |
| 文件頁數(shù)： | 28/53頁 |
| 文件大?。?/td> | 1328K |
| 代理商： | HYB18L128160BF-7.5 |
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HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
28
V1.4, 2004-04-30
2.4.5.5
A READ burst may be followed by, or truncated with a PRECHARGE command to the same bank, provided that
Auto Precharge was not activated. This is shown in
Figure 22
.
The PRECHARGE command should be issued x clock cycles before the clock edge at which the last desired data
element is valid, where x equals the CAS latency for READ bursts minus 1. Following the PRECHARGE
command, a subsequent ACTIVE command to the same bank cannot be issued until
t
RP
is met. Please note that
part of the row precharge time is hidden during the access of the last data elements.
In the case of a READ being executed to completion, a PRECHARGE command issued at the optimum time (as
described above) provides the same operation that would result from the same READ burst with Auto Precharge
enabled. The disadvantage of the PRECHARGE command is that it requires that the command and address
busses be available at the appropriate time to issue the command. The advantage of the PRECHARGE command
is that it can be used to truncate bursts.
READ to PRECHARGE
Figure 22
READ to PRECHARGE Timing
Ba A, Col n = bank A, column n; BA Am Row = bank A, row x
DO n = Data Out from column n
Burst Length = 4 in the case shown.
CAS latency = 3 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DO n.
= Don't Care
CL=3
CLK
t
RP
Command
NOP
READ
NOP
NOP
NOP
NOP
ACT
PRE
Ba A,
Row a
Address
Ba A
Ba A,
Col n
Dis AP
Pre Bank A
Pre All
A10
(AP)
AP
DQ
DO n+1
DO n
DO n+2
DO n+3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB18L256160BF-75 | DRAMs for Mobile Applications |
| HYB18L256160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-7.5 | RT ANG PCB CONT .40/1.295 BULK |
| HYB18RL25632AC-4 | MEMORY SPECTRUM |
| HYC3N2560NO50AA1AA | CAP 560PF 100V 10% X7R AXIAL TR-14 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BC-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160BCL-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BCX-7.5 | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
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