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參數(shù)資料
| 型號： | HY64UD16322M-DF70E |
| 英文描述： | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| 中文描述： | 偽靜態(tài)內(nèi)存| 2MX16 |的CMOS | BGA封裝| 48PIN |塑料 |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 350K |
| 代理商： | HY64UD16322M-DF70E |
HY64UD16162M Series
3
Revision 1.7
March. 2002
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied. Exposure
to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
Power
Standby
/CS1
H
X
X
L
L
L
L
L
L
L
L
L
CS2
H
L
H
H
H
H
H
H
H
H
H
H
/WE
X
X
X
L
H
H
L
H
H
L
H
H
/OE
X
X
X
X
L
H
X
L
H
X
L
H
/LB
X
X
H
L
L
L
H
H
H
L
L
L
/UB
X
X
H
H
H
H
L
L
L
L
L
L
Mode
Deselected
Deselected
Deselected
Write
Read
Output Disabled
Write
Read
Output Disabled
Write
Read
Output Disabled
I/O1~I/O8
High-Z
High-Z
High-Z
D
IN
D
OUT
High-Z
High-Z
High-Z
High-Z
D
IN
D
OUT
High-Z
I/O9~I/O16
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
D
IN
D
OUT
High-Z
D
IN
D
OUT
High-Z
I/O Pin
Deep Power Down
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Active
Note
1. H=V
IH
, L=V
IL
, X=don’t care(V
IL
or V
IH
)
2. /UB, /LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When /LB is LOW, data is written or read to the lower byte, I/O1 - I/O8.
When /UB is LOW, data is written or read to the upper byte, I/O9 - I/O16.
ORDERING INFORMATION
Part Number
HY64UD16162M-E
HY64UD16162M-I
Note
1. E : Extended Temp. (-25
°
C ~ 85
°
C)
2. I : Industrial Temp. (-40
°
C ~ 85
°
C)
Speed
70 / 85
70 / 85
Package
FBGA
FBGA
Power
LL-Part
LL-Part
Temperature
E
1
I
2
ABSOLUTE MAXIMUM RATINGS
1
Symbol
V
IN
,V
OUT
Vdd
Parameter
Rating
-0.3 to Vdd+0.3
-0.3 to 3.6
-25 to 85
-40 to 85
Remark
Input/Output Voltage
Power Supply
Unit
V
V
°
C
°
C
T
A
Ambient Temperature
HY64UD16162M-E
HY64UD16162M-I
T
STG
P
D
T
SOLDER
Storage Temperature
Power Dissipation
Ball Soldering Temperature & Time
-55 to 150
1.0
26010
°
C
W
°
Csec
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PDF描述 |
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| HY64UD16322M-DF70I | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF85E | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
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| HYB-1 | Wideband Impedance Transforming 180 3dB Hybrid 1-300 MHz |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY64UD16322M-DF70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M-DF85E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF85I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
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