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參數(shù)資料
| 型號(hào)： | HY64UD16322A-DF70I |
| 廠商： | Hynix Semiconductor Inc. |
| 元件分類： | DRAM |
| 英文描述： | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| 中文描述： | 200萬× 16位低功耗1T/1C偽靜態(tài)存儲(chǔ)器 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 269K |
| 代理商： | HY64UD16322A-DF70I |
HY64UD16322A Series
2
Revision 1.1
May. 2003
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not
assume any responsibility for use of circuits described. No patent licenses are implied.
2
2
M x 16 bit Low
Low Power 1T/1C
SRAM
DESCRIPTION
The HY64UD16322A is a 32Mbit 1T/1C SRAM
featured by high-speed operation and super low
power consumption. The HY64UD16322A adopts
one transistor memory cell and is organized as
2,097,152 words by 16bits. The HY64UD16322A
operates in the extended range of temperature and
supports a wide operating voltage range. The
HY64UD16322A also supports the deep power
down mode for a super low standby current. The
HY64UD16322A delivers the high-density low
power SRAM capability to the high-speed low power
system.
PRODUCT FAMILY
CMOS Process Technology
2M x 16 bit Organization
TTL compatible and Tri-state outputs
Deep Power Down : Memory cell data hold invalid
Standard pin configuration : 48-FBGA(6mmX8mm)
Data mask function by /LB, /UB
Separated I/O Power Supply : Vddq
FEATURES
Note 1. tCS - /UB,/LB=High : Chip Deselect.
PIN DESCRIPTION
Pin Name
/CS1
CS2
Pin Function
Pin Name
/OE
Pin Function
Chip Select
Deep Power Down
IO1~IO8
IO9~IO16
Lower Data Inputs/Outputs
Upper Data Inputs/Outputs
/WE
/LB
/UB
DNU
Write Enable
Lower Byte(I/O1~I/O8)
Upper Byte(I/O9~I/O16)
Do Not Use
A0~A20
Vdd
Vddq
Address Inputs
Power Supply for Internal Circuit
Power Supply for I/O
Output Enable
Vss
Ground
PIN CONNECTION
(Top View)
/LB
/OE
A0
A1
A2
CS2
IO9
/UB
A3
A4
/CS1
IO1
IO10 IO11
A5
A6
IO2
IO3
Vss
IO12
A17
A7
IO4
Vdd
Vddq IO13 DNU
A16
IO5
Vss
IO15 IO14
A14
A15
IO6
IO7
IO16
A19
A12
A13
/WE
IO8
A18
A8
A9
A10
A11
A20
BLOCK DIAGRAM
A
B
P
C
D
B
D
ROW
DECODER
S
W
D
B
MEMORY ARRAY
2,048K x 16
CONTROL
LOGIC
A0
A20
IO1
IO8
IO9
IO16
/CS1
CS2
/LB
/UB
/OE
Product No.
Voltage
[V]
2.7~3.3
Speed
tRC[ns]
70
Temp.
[
°
C]
-25~85
(I
SB1
,Max) (I
DPD
,Max) (I
CC2
,Max)
100
μ
A
2
μ
A
Power Dissipation
Mode
HY64UD16322A-DF70I
2.7~3.3
70
-40~85
100
μ
A
2
μ
A
25
mA
1CS with /UB,/LB:tCS
1
HY64UD16322A-DF70E
25
mA
1CS with /UB,/LB:tCS
1
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| HY64UD16322A-E | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-I | 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY64UD16322A-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322M-DF70E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF70I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
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