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參數(shù)資料
| 型號(hào)： | HY64UD16162M-DF85E |
| 英文描述： | PSEUDO-STATIC RAM|1MX16|CMOS|BGA|48PIN|PLASTIC |
| 中文描述： | 偽靜態(tài)內(nèi)存| 1MX16 |的CMOS | BGA封裝| 48PIN |塑料 |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大?。?/td> | 350K |
| 代理商： | HY64UD16162M-DF85E |
HY64UD16162M Series
6
Revision 1.7
March. 2002
STANDBY MODE CHARACTERISTICS
Mode
Memory Cell Data
Standby Current
[
μ
A]
Wait Time
[
μ
s]
Standby
Valid
85 / 70ns
0
Deep Power Down
Invalid
2
200
75 / 85ns
STATE DIAGRAM
1. Supply power.
2. Maintain stable power for longer than 200
μ
s.
Power-Up Sequence
1. Keep CS2 low state.
Deep power down mode is maintained while CS2 is low state.
Deep Power Down Entry Sequence
1. Keep CS2 high state.
2. Maintain stable power for longer than 200
μ
s.
Deep Power Down Exit Sequence
Power On
s
Wait 200
m
s
s
Active
Standby
Mode
Deep Power
Down Mode
/ CS1=V
IL
, CS2=V
IH
,
/UB&/LB
≠
V
IH
CS2=V
IL
CS2=V
IL
P
S
CS2=V
IH
, /CS1=V
IH
or /UB,/LB=V
IH
D
S
Deep Power Down
Entry Sequence
CS2=V
IH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY64UD16322M | x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M |
| HY64UD16322M-DF70E | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF70I | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF85E | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF85I | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY64UD16162M-DF85I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16162M-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16162M-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-DF70E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
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