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參數(shù)資料
| 型號： | HY64UD16162M-DF85E |
| 英文描述： | PSEUDO-STATIC RAM|1MX16|CMOS|BGA|48PIN|PLASTIC |
| 中文描述： | 偽靜態(tài)內(nèi)存| 1MX16 |的CMOS | BGA封裝| 48PIN |塑料 |
| 文件頁數(shù)： | 10/11頁 |
| 文件大小： | 350K |
| 代理商： | HY64UD16162M-DF85E |
HY64UD16162M Series
10
Revision 1.7
March. 2002
NOTE.
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE MILLIMETERS.
BALL DIAMETER IN A PLANE PARALLEL TO DATUM C.
CROWN OF THE SOLDER BALLS.
5. THIS IS A CONTROLLING DIMENSION.
PACKAGE DIMENSION
48ball Fine Pitch Ball Grid Array Package(F)
3. DIMENSION “D” IS MEASURED AT THE MAXIMUM SOLDER
4. PRIMARY DATUM C(SEATING PLANE) IS DEFINED BY THE
unit : mm
Max.
A
A
B
B
B1
C
C
C1
D
D
E
E
E1
E2
R
R
Symbol
-
-
-
-
6.90
-
-
7.90
0.30
-
-
-
-
0.20
-
-
Min.
0.75
7.00
3.75
8.00
5.25
0.35
1.00
0.75
0.25
-
-
Typ.
-
-
-
-
7.10
-
-
8.10
0.40
1.10
-
-
0.30
0.08
B
B
C
C
TOP VIEW
A1 CORNER
INDEX AREA
E
E
E2
SIDE VIEW
C
C
A
A
5
5
R
R
D(DIAMETER)
3
3
E1
SEATING PLANE
4
4
A
A
B1
C1
BOTTOM VIEW
A
A
B
B
C
C
D
D
E
E
F
F
G
G
H
H
6
6
5
5
4
4
3
3
2
2
1
1
A
A
C/2
B/2
A1 INDEX
MARK
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY64UD16322M | x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M |
| HY64UD16322M-DF70E | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF70I | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF85E | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
| HY64UD16322M-DF85I | PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY64UD16162M-DF85I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16162M-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16162M-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
| HY64UD16322A-DF70E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM |
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